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Quantum mechanical effects on MOSFET...

Wang, Lihui.

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Quantum mechanical effects on MOSFET scaling limit.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Quantum mechanical effects on MOSFET scaling limit./
Author:	Wang, Lihui.
Description:	207 p.
Notes:	Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5306.
Contained By:	Dissertation Abstracts International67-09B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3233616
ISBN:	9780542862328

Quantum mechanical effects on MOSFET scaling limit.
Wang, Lihui.

Quantum mechanical effects on MOSFET scaling limit. - 207 p.

Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5306.

Thesis (Ph.D.)--Georgia Institute of Technology, 2006.

This thesis describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. An explicit expression of gate direct tunneling for thin gate oxides has been developed by solving the Schrodinger equation analytically. In addition, the impact of different gate electrode as well as gate insulation materials on the gate direct tunneling is explored. This results in an analytical estimation of the potential solutions to excessive gate leakage current. The energy quantization analysis involves the derivation of a quantum mechanical charge distribution model by solving the coupled Poisson and Schrodinger equations. Based on the newly developed charge distribution model, threshold voltage and subthreshold swing models are obtained. A transregional drain current model which takes into account the quantum mechanical correction on device parameters is derived. Results from this model show good agreement with numeric simulation results of both long-channel and short-channel MOSFETs. The models derived here are used to project MOSFET scaling limits. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process.

ISBN: 9780542862328Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Quantum mechanical effects on MOSFET scaling limit.
LDR:02256nmm 2200265 4500 001 1832101
005 20070628102712.5
008 130610s2006 eng d
020 $a 9780542862328
035 $a (UnM)AAI3233616
035 $a AAI3233616
040 $a UnM $c UnM
100 1 $a Wang, Lihui. $3 901202
245 1 0 $a Quantum mechanical effects on MOSFET scaling limit.
300 $a 207 p.
500 $a Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5306.
500 $a Adviser: James D. Meindl.
502 $a Thesis (Ph.D.)--Georgia Institute of Technology, 2006.
520 $a This thesis describes advanced modeling of nanoscale bulk MOSFETs incorporating critical quantum mechanical effects such as gate direct tunneling and energy quantization of carriers. An explicit expression of gate direct tunneling for thin gate oxides has been developed by solving the Schrodinger equation analytically. In addition, the impact of different gate electrode as well as gate insulation materials on the gate direct tunneling is explored. This results in an analytical estimation of the potential solutions to excessive gate leakage current. The energy quantization analysis involves the derivation of a quantum mechanical charge distribution model by solving the coupled Poisson and Schrodinger equations. Based on the newly developed charge distribution model, threshold voltage and subthreshold swing models are obtained. A transregional drain current model which takes into account the quantum mechanical correction on device parameters is derived. Results from this model show good agreement with numeric simulation results of both long-channel and short-channel MOSFETs. The models derived here are used to project MOSFET scaling limits. Tunneling and quantization effects cause large power dissipation, low drive current, and strong sensitivities to process variation, which greatly limit CMOS scaling. Developing new materials and structures is imminent to extend the scaling process.
590 $a School code: 0078.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a Georgia Institute of Technology. $3 696730
773 0 $t Dissertation Abstracts International $g 67-09B.
790 1 0 $a Meindl, James D., $e advisor
790 $a 0078
791 $a Ph.D.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3233616