東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁

切換: 標籤 | MARC模式 | ISBD

Novel applications of carbon nanotub...

Qi, Pengfei.

FindBook

Google Book

Amazon

博客來

Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor./
作者:	Qi, Pengfei.
面頁冊數:	93 p.
附註:	Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5045.
Contained By:	Dissertation Abstracts International67-09B.
標題:	Chemistry, Analytical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3236114
ISBN:	9780542902345

Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor.
Qi, Pengfei.

Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor. - 93 p.

Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5045.

Thesis (Ph.D.)--Stanford University, 2006.

A single-walled carbon nanotube (SWNT) can be viewed as a graphene sheet rolled up into a seamless hollow cylinder. Since the discovery in 1991, carbon nanotube has aroused tremendous research efforts worldwide. They have well defined structure in the atomic scale, and are electrically stable, mechanically robust and chemically inert. They are seen as the building blocks for the next generation of electronic, optical, electrochemical, electromechanical devices in the nanometer scale. In this thesis, I will demonstrate that polyethyleneimine and nafion functionalization impart high sensitivity and selectivity to carbon nanotube gas sensor arrays. I will also describe the fabrication of the first SWNT quasi-one dimensional electrodes. The sharp quasi-1D geometry of the source (S) and drain (D) electrodes can facilitate the optimum gate control for transistors involving Schottky barriers (SB) at the contact (which is the case for organic field-effect-transistors). I will also discuss the hydrogenation and hydro-carbonation (etching) of SWNTs. The temperature, power, and diameter dependences of hydrogenation and hydro-carbonation were revealed. I will also demonstrate the selective plasma etching of metallic SWNTs. We found strong diameter dependence of the selectivity. In the diameter range of 1.4-1.8nm, metallic SWNTs can be effectively etched and removed by methane plasma treatment, while the semiconducting SWNTs will remain. This selective plasma etching method might be a key step for large scale SWNTs based field-effect-transistors manufacturing.

ISBN: 9780542902345Subjects--Topical Terms:

586156
Chemistry, Analytical.

Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor.
LDR:02452nmm 2200265 4500 001 1828711
005 20071024130540.5
008 130610s2006 eng d
020 $a 9780542902345
035 $a (UMI)AAI3236114
035 $a AAI3236114
040 $a UMI $c UMI
100 1 $a Qi, Pengfei. $3 1917599
245 1 0 $a Novel applications of carbon nanotube: Sensor, one-dimensional contact, and field-effect-transistor.
300 $a 93 p.
500 $a Source: Dissertation Abstracts International, Volume: 67-09, Section: B, page: 5045.
500 $a Adviser: Hangjie Dai.
502 $a Thesis (Ph.D.)--Stanford University, 2006.
520 $a A single-walled carbon nanotube (SWNT) can be viewed as a graphene sheet rolled up into a seamless hollow cylinder. Since the discovery in 1991, carbon nanotube has aroused tremendous research efforts worldwide. They have well defined structure in the atomic scale, and are electrically stable, mechanically robust and chemically inert. They are seen as the building blocks for the next generation of electronic, optical, electrochemical, electromechanical devices in the nanometer scale. In this thesis, I will demonstrate that polyethyleneimine and nafion functionalization impart high sensitivity and selectivity to carbon nanotube gas sensor arrays. I will also describe the fabrication of the first SWNT quasi-one dimensional electrodes. The sharp quasi-1D geometry of the source (S) and drain (D) electrodes can facilitate the optimum gate control for transistors involving Schottky barriers (SB) at the contact (which is the case for organic field-effect-transistors). I will also discuss the hydrogenation and hydro-carbonation (etching) of SWNTs. The temperature, power, and diameter dependences of hydrogenation and hydro-carbonation were revealed. I will also demonstrate the selective plasma etching of metallic SWNTs. We found strong diameter dependence of the selectivity. In the diameter range of 1.4-1.8nm, metallic SWNTs can be effectively etched and removed by methane plasma treatment, while the semiconducting SWNTs will remain. This selective plasma etching method might be a key step for large scale SWNTs based field-effect-transistors manufacturing.
590 $a School code: 0212.
650 4 $a Chemistry, Analytical. $3 586156
690 $a 0486
710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 67-09B.
790 1 0 $a Dai, Hangjie, $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 2006
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3236114