東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Spectroscopic characterization of ra...

Yang, Qing.

Linked to FindBook

Google Book

Amazon

博客來

Spectroscopic characterization of radiation-induced defects in gallium nitride.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Spectroscopic characterization of radiation-induced defects in gallium nitride./
Author:	Yang, Qing.
Description:	147 p.
Notes:	Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5634.
Contained By:	Dissertation Abstracts International66-10B.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3190878
ISBN:	9780542344275

Spectroscopic characterization of radiation-induced defects in gallium nitride.
Yang, Qing.

Spectroscopic characterization of radiation-induced defects in gallium nitride. - 147 p.

Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5634.

Thesis (Ph.D.)--University of California, Berkeley, 2005.

Radiation damage studies of GaN provide insights into the fundamental properties of the material as well as the basic knowledge needed to predict degradation of GaN-based devices in space-based applications or other radiation environments. The main interests are in investigating the properties of radiation-induced defects at the microscopic level and providing data to evaluate the radiation hardness of the material.

ISBN: 9780542344275Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Spectroscopic characterization of radiation-induced defects in gallium nitride.
LDR:03559nmm 2200289 4500 001 1828092
005 20061228142313.5
008 130610s2005 eng d
020 $a 9780542344275
035 $a (UnM)AAI3190878
035 $a AAI3190878
040 $a UnM $c UnM
100 1 $a Yang, Qing. $3 1916999
245 1 0 $a Spectroscopic characterization of radiation-induced defects in gallium nitride.
300 $a 147 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5634.
500 $a Chair: Eicke R. Weber.
502 $a Thesis (Ph.D.)--University of California, Berkeley, 2005.
520 $a Radiation damage studies of GaN provide insights into the fundamental properties of the material as well as the basic knowledge needed to predict degradation of GaN-based devices in space-based applications or other radiation environments. The main interests are in investigating the properties of radiation-induced defects at the microscopic level and providing data to evaluate the radiation hardness of the material.
520 $a Selective damage of the N-sublattice is achieved with 0.42 MeV electron irradiation. Two new luminescence lines at 3.4732 eV and 3.4545 eV are detected by time-resolved photoluminescence after irradiation. The two lines are associated with the ground state bound exciton of a new donor B1 and its two-electron transition. The donor binding energy of B1 is determined as 24.9 +/- 0.4 meV, shallower than the impurity donors ON and Si Ga. Among the possible defects, the nitrogen vacancy (VN) is the best candidate for the new donor B1. In addition, a change under focused 267 nm laser beam is observed at cryogenic temperatures in the excitonic luminescence of the irradiated sample. The donor bound exciton intensity of ON and SiGa, the total band edge luminescence intensity, and the luminescence decay lifetime of free and bound excitons all increase with laser exposure time. In contrast, the relative intensity of the B 1 bound exciton emission decreases. The change is not observed with below bandgap illumination. We propose that the light-induced change reflects the illumination-assisted dissociation of non-radiative defect complexes O N-Ni and SiGa-Ni, and subsequently the migration of Ni and at least partial annihilation of N i at VN. The new donor B1 bound exciton emission and the light-induced change starts to disappear at annealing temperature around 300°C, indicating the annihilation of the irradiation-induced vacancy and interstitial defects. An activation energy of 1.5 eV is obtained, which is proposed to be the sum of the dissociation energy of the ON-N i and SiGa-Ni complexes and the migration barrier of the Ni-.
520 $a Irradiation with 25 MeV and 55 MeV protons causes damage in both Ga and N-sublattices. A radiation-induced increase in the yellow luminescence and red-shift of the YL peak are observed in a free-standing HVPE GaN after proton irradiation, indicating the introduction of Ga-vacancies. Time-resolved photoluminescence reveals a significant reduction of the carrier lifetime in addition to the decrease in luminescence intensity. Carrier lifetime degradation constants are in the range of 10-15 to 10-14 cm 2/ns, which is 5 to 25 times better than for GaAs. (Abstract shortened by UMI.)
590 $a School code: 0028.
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0794
710 2 0 $a University of California, Berkeley. $3 687832
773 0 $t Dissertation Abstracts International $g 66-10B.
790 1 0 $a Weber, Eicke R., $e advisor
790 $a 0028
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3190878