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Low-cost deposition methods for tran...

Norris, Benjamin J.

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Low-cost deposition methods for transparent thin-film transistors.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Low-cost deposition methods for transparent thin-film transistors./
Author:	Norris, Benjamin J.
Description:	168 p.
Notes:	Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6250.
Contained By:	Dissertation Abstracts International64-12B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3115478

Low-cost deposition methods for transparent thin-film transistors.
Norris, Benjamin J.

Low-cost deposition methods for transparent thin-film transistors. - 168 p.

Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6250.

Thesis (Ph.D.)--Oregon State University, 2004.

The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and polycrystalline thin-films. Optimal spin-coated ZnO thin-films are obtained for a 32 nm thick film which is converted to ZnO at 600°C in air. Spin-coated ZnO TTFT mobilities are consistently in the range of 0.1--0.2 cm 2/Vs. Spin-coating deposition methods for HfO2 are presented as a novel way to deposit low-cost gate insulators. Spin-coated HfO2 dielectric has a breakdown field, dielectric constant, loss tangent, and leakage current at 1 MV/ cm of &sim;2.1 MV/cm, 12.1--13.5, 0.411%, and 17.37 nA/cm2, respectively. Additionally, ZnO TTFTs constructed using spin-coated HfO 2 gate insulators possess electrical characteristics similar to those obtained with aluminum oxide and titanium oxide superlattice (ATO) gate dielectrics.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Low-cost deposition methods for transparent thin-film transistors.
LDR:02252nmm 2200277 4500 001 1810876
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008 130614s2004 eng d
035 $a (UnM)AAI3115478
035 $a AAI3115478
040 $a UnM $c UnM
100 1 $a Norris, Benjamin J. $3 1900473
245 1 0 $a Low-cost deposition methods for transparent thin-film transistors.
300 $a 168 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-12, Section: B, page: 6250.
500 $a Adviser: John F. Wager.
502 $a Thesis (Ph.D.)--Oregon State University, 2004.
520 $a The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and polycrystalline thin-films. Optimal spin-coated ZnO thin-films are obtained for a 32 nm thick film which is converted to ZnO at 600°C in air. Spin-coated ZnO TTFT mobilities are consistently in the range of 0.1--0.2 cm 2/Vs. Spin-coating deposition methods for HfO2 are presented as a novel way to deposit low-cost gate insulators. Spin-coated HfO2 dielectric has a breakdown field, dielectric constant, loss tangent, and leakage current at 1 MV/ cm of &sim;2.1 MV/cm, 12.1--13.5, 0.411%, and 17.37 nA/cm2, respectively. Additionally, ZnO TTFTs constructed using spin-coated HfO 2 gate insulators possess electrical characteristics similar to those obtained with aluminum oxide and titanium oxide superlattice (ATO) gate dielectrics.
520 $a A second objective of this dissertation is to demonstrate a novel photolithography processing method for ZnO TTFTs with critical dimensions as small as 25 mum. Lithography patterning of ZnO TTFTs is introduced as a means of assessing the effects of shrinking device dimensions on electrical performance.
590 $a School code: 0172.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0544
690 $a 0611
710 2 0 $a Oregon State University. $3 625720
773 0 $t Dissertation Abstracts International $g 64-12B.
790 1 0 $a Wager, John F., $e advisor
790 $a 0172
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3115478