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Silicon nanowires for advanced micro...

Tang, Qiang.

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Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices./
作者:	Tang, Qiang.
面頁冊數:	112 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5726.
Contained By:	Dissertation Abstracts International64-11B.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3111807

Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices.
Tang, Qiang.

Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices. - 112 p.

Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5726.

Thesis (Ph.D.)--Stanford University, 2004.

New nano-scale assembly technology, such as catalyzed or self-assembled growth of nanowires and quantum dots, may benefit integrated-circuit production by eliminating critical lithography steps. Many metals have been used to catalyze Si nanowire growth. Among them, Ti exhibits a diffusivity and solubility in silicon at least two orders of magnitude lower than that of Au, Fe, Zn, Ni, or Co at the same temperature. Therefore, Ti-catalyzed silicon nanowires are more compatible with integrated-circuit components and applications.Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices.
LDR:03205nmm 2200301 4500 001 1810850
005 20041216102941.5
008 130614s2004 eng d
035 $a (UnM)AAI3111807
035 $a AAI3111807
040 $a UnM $c UnM
100 1 $a Tang, Qiang. $3 1900447
245 1 0 $a Silicon nanowires for advanced microelectronics: MBE gas-source growth and in situ devices.
300 $a 112 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-11, Section: B, page: 5726.
500 $a Adviser: James S. Harris, Jr.
502 $a Thesis (Ph.D.)--Stanford University, 2004.
520 $a New nano-scale assembly technology, such as catalyzed or self-assembled growth of nanowires and quantum dots, may benefit integrated-circuit production by eliminating critical lithography steps. Many metals have been used to catalyze Si nanowire growth. Among them, Ti exhibits a diffusivity and solubility in silicon at least two orders of magnitude lower than that of Au, Fe, Zn, Ni, or Co at the same temperature. Therefore, Ti-catalyzed silicon nanowires are more compatible with integrated-circuit components and applications.
520 $a Using TiSi2 islands as a catalyst, we have grown Si nanowires by molecular-beam epitaxy (MBE) with Si2H6 as a gas source. Approximately one monolayer of Ti was deposited on Si substrates and then annealed at high temperature to form TiSi2 islands, which can nucleate Si nanowires in the subsequent growth, with diameters mainly between 20 nm and 40 nm.
520 $a Most TiSi2 islands are identified as C49-TiSi2 with the orientation: Si[110]//TiSi2[100] (&sim;6% lattice mismatch) and Si(001)//TiSi2(010). These islands do not nucleate Si nanowires, possibly due to a highly defective and strained interface with the Si substrate. Growth of Si nanowires is associated with nucleation by TiSi2 islands with orientations other than the orientation mentioned above. In these wires, better lattice matching at the TiSi2/Si interface is observed for major crystallographic planes. This is likely due to a lower energy barrier and/or a smaller driving force for Si atom attachment at the TiSi2-Si interface resulting from the better lattice match. Additionally, abrupt changes in growth direction (kinking) frequently occur, typically accompanied by crystal twinning. Strain at the TiSi2/Si interface is posited to be the main reason for the frequent twinning and kinking of nanowires.
520 $a The dopants As (donor) and B (acceptor) have been introduced during growth of Si nanowires. The in-situ p-n junctions produced by this technique display diode-like I-V behavior. A tungsten layer has also been deposited as a gate (electrically isolated) between the top contact of a wire and the substrate. The gated structures show modulation of the current through the wire, which demonstrates that surrounding-gate field-effect transistors made from Si nanowires are possible.
590 $a School code: 0212.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0794
690 $a 0544
710 2 0 $a Stanford University. $3 754827
773 0 $t Dissertation Abstracts International $g 64-11B.
790 1 0 $a Harris, James S., Jr., $e advisor
790 $a 0212
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3111807