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Manufacture and characterization of ...

Bender, Jeffrey P.

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Manufacture and characterization of novel ACTFEL materials and devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Manufacture and characterization of novel ACTFEL materials and devices./
作者:	Bender, Jeffrey P.
面頁冊數:	298 p.
附註:	Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5110.
Contained By:	Dissertation Abstracts International64-10B.
標題:	Engineering, Electronics and Electrical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3107718

Manufacture and characterization of novel ACTFEL materials and devices.
Bender, Jeffrey P.

Manufacture and characterization of novel ACTFEL materials and devices. - 298 p.

Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5110.

Thesis (Ph.D.)--Oregon State University, 2004.

The aim of this dissertation is to develop non-traditional approaches to alter-nating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration of promising but relatively uninvestigated phosphor materials and low-temperature processing techniques. ACTFEL devices with Zn2GeO4:Mn phosphor layers are fabricated and produce excellent luminance and good green chromaticity. Due to the novelty of oxide ACTFEL phosphor materials, the electro-optic behavior of Zn2GeO4:Mn ACTFEL devices is thoroughly characterized. ACTFEL devices with MgS:Eu devices are investigated and shown to produce very bright orange light emission and semi-ideal electrical behavior. By doping MgS with various trivalent lanthanide ions, the ability of MgS ACTFEL devices to support blue light emission is verified and the electron energy distribution is evaluated in comparison to the well-known ACTFEL phosphor materials ZnS and SrS. In addition to new materials investigation, a novel low-temperature processing technique is developed. Hydrothermal annealing is shown to recrystallize sputtered Zn2GeO4:Mn thin-films, resulting in excellent green photoluminescent emission from an inorganic material processed at temperatures as low as 125°C. This low-temperature technique is used to fabricate operational inorganic ACTFEL devices on flexible plastic substrates.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Manufacture and characterization of novel ACTFEL materials and devices.
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245 1 0 $a Manufacture and characterization of novel ACTFEL materials and devices.
300 $a 298 p.
500 $a Source: Dissertation Abstracts International, Volume: 64-10, Section: B, page: 5110.
500 $a Adviser: John F. Wager.
502 $a Thesis (Ph.D.)--Oregon State University, 2004.
520 $a The aim of this dissertation is to develop non-traditional approaches to alter-nating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration of promising but relatively uninvestigated phosphor materials and low-temperature processing techniques. ACTFEL devices with Zn2GeO4:Mn phosphor layers are fabricated and produce excellent luminance and good green chromaticity. Due to the novelty of oxide ACTFEL phosphor materials, the electro-optic behavior of Zn2GeO4:Mn ACTFEL devices is thoroughly characterized. ACTFEL devices with MgS:Eu devices are investigated and shown to produce very bright orange light emission and semi-ideal electrical behavior. By doping MgS with various trivalent lanthanide ions, the ability of MgS ACTFEL devices to support blue light emission is verified and the electron energy distribution is evaluated in comparison to the well-known ACTFEL phosphor materials ZnS and SrS. In addition to new materials investigation, a novel low-temperature processing technique is developed. Hydrothermal annealing is shown to recrystallize sputtered Zn2GeO4:Mn thin-films, resulting in excellent green photoluminescent emission from an inorganic material processed at temperatures as low as 125°C. This low-temperature technique is used to fabricate operational inorganic ACTFEL devices on flexible plastic substrates.
590 $a School code: 0172.
650 4 $a Engineering, Electronics and Electrical. $3 626636
690 $a 0544
710 2 0 $a Oregon State University. $3 625720
773 0 $t Dissertation Abstracts International $g 64-10B.
790 1 0 $a Wager, John F., $e advisor
790 $a 0172
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3107718