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Fabrication and modeling of thin-fil...

Miller, Kyle.

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Fabrication and modeling of thin-film anodic titania memristors.

Record Type:	Language materials, printed : Monograph/item
Title/Author:	Fabrication and modeling of thin-film anodic titania memristors./
Author:	Miller, Kyle.
Description:	55 p.
Notes:	Source: Masters Abstracts International, Volume: 49-01, page: 0586.
Contained By:	Masters Abstracts International49-01.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1479822
ISBN:	9781124157481

Fabrication and modeling of thin-film anodic titania memristors.
Miller, Kyle.

Fabrication and modeling of thin-film anodic titania memristors. - 55 p.

Source: Masters Abstracts International, Volume: 49-01, page: 0586.

Thesis (M.S.)--Iowa State University, 2010.

A new method for the fabrication of memristors is exhibited involving the electrochemical anodization of titanium. This is an inexpensive, room temperature alternative to the current methods of fabrication. Two sets of devices were fabricated with varying anodization times and the devices were characterized. One set of the devices was annealed before characterization to evaluate the importance of annealing as stated in papers. The devices not annealed yielded memristive behavior due to oxygen vacancies created at the titanium-TiO2 junction buried below the surface of the device. The annealed devices behaved as resistors because the surface of the TiO 2 exposed to the annealing created oxygen vacancies at this interface ensuring both junctions were ohmic. Using an existing model, the best device was modeled by adapting the relevant process parameters.

ISBN: 9781124157481Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Fabrication and modeling of thin-film anodic titania memristors.
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020 $a 9781124157481
035 $a (UMI)AAI1479822
035 $a AAI1479822
040 $a UMI $c UMI
100 1 $a Miller, Kyle. $3 1678940
245 1 0 $a Fabrication and modeling of thin-film anodic titania memristors.
300 $a 55 p.
500 $a Source: Masters Abstracts International, Volume: 49-01, page: 0586.
500 $a Advisers: Nathan Neihart; Sumit Chaudhary.
502 $a Thesis (M.S.)--Iowa State University, 2010.
520 $a A new method for the fabrication of memristors is exhibited involving the electrochemical anodization of titanium. This is an inexpensive, room temperature alternative to the current methods of fabrication. Two sets of devices were fabricated with varying anodization times and the devices were characterized. One set of the devices was annealed before characterization to evaluate the importance of annealing as stated in papers. The devices not annealed yielded memristive behavior due to oxygen vacancies created at the titanium-TiO2 junction buried below the surface of the device. The annealed devices behaved as resistors because the surface of the TiO 2 exposed to the annealing created oxygen vacancies at this interface ensuring both junctions were ohmic. Using an existing model, the best device was modeled by adapting the relevant process parameters.
590 $a School code: 0097.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0544
690 $a 0794
710 2 $a Iowa State University. $b Electrical and Computer Engineering. $3 1018524
773 0 $t Masters Abstracts International $g 49-01.
790 1 0 $a Neihart, Nathan, $e advisor
790 1 0 $a Chaudhary, Sumit, $e advisor
790 1 0 $a Fayed, Ayman $e committee member
790 $a 0097
791 $a M.S.
792 $a 2010
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1479822