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Perpendicular magnetic anisotropy ma...

Tadisina, Zeenath Reddy.

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Perpendicular magnetic anisotropy materials for reduced current switching devices.

紀錄類型:	書目-語言資料,印刷品 : Monograph/item
正題名/作者:	Perpendicular magnetic anisotropy materials for reduced current switching devices./
作者:	Tadisina, Zeenath Reddy.
面頁冊數:	100 p.
附註:	Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.
Contained By:	Dissertation Abstracts International71-07B.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3409056
ISBN:	9781124060637

Perpendicular magnetic anisotropy materials for reduced current switching devices.
Tadisina, Zeenath Reddy.

Perpendicular magnetic anisotropy materials for reduced current switching devices. - 100 p.

Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.

Thesis (Ph.D.)--The University of Alabama, 2010.

Recently, spin-transfer switching of magnetic tunnel junctions (MTJs) has become a very active area of research. It is theoretically postulated that using perpendicular magnetic anisotropy materials will substantially reduce the critical current density for switching, resulting in lower energy devices, while keeping the thermal stability high. A range of perpendicular anisotropy material systems, including (i) multilayers, (ii) crystalline alloys, and (iii) amorphous alloys have been intensively studied in this dissertation. The surface and bulk anisotropy, damping parameter, and structural properties of these material systems have been investigated. Magnetic tunnel junctions based on some of these perpendicular material schemes have been fabricated, and their transport properties have been measured and related to the anisotropy. We have found several promising approaches to magnetic tunnel junctions utilized in spin-torque transfer random access memory (STT-RAM).

ISBN: 9781124060637Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Perpendicular magnetic anisotropy materials for reduced current switching devices.
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245 1 0 $a Perpendicular magnetic anisotropy materials for reduced current switching devices.
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500 $a Source: Dissertation Abstracts International, Volume: 71-07, Section: B, page: 4480.
500 $a Adviser: Subhadra Gupta.
502 $a Thesis (Ph.D.)--The University of Alabama, 2010.
520 $a Recently, spin-transfer switching of magnetic tunnel junctions (MTJs) has become a very active area of research. It is theoretically postulated that using perpendicular magnetic anisotropy materials will substantially reduce the critical current density for switching, resulting in lower energy devices, while keeping the thermal stability high. A range of perpendicular anisotropy material systems, including (i) multilayers, (ii) crystalline alloys, and (iii) amorphous alloys have been intensively studied in this dissertation. The surface and bulk anisotropy, damping parameter, and structural properties of these material systems have been investigated. Magnetic tunnel junctions based on some of these perpendicular material schemes have been fabricated, and their transport properties have been measured and related to the anisotropy. We have found several promising approaches to magnetic tunnel junctions utilized in spin-torque transfer random access memory (STT-RAM).
590 $a School code: 0004.
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650 4 $a Engineering, Metallurgy. $3 1023648
650 4 $a Engineering, Materials Science. $3 1017759
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790 1 0 $a Gupta, Subhadra, $e advisor
790 1 0 $a Reddy, Ramana G. $e committee member
790 1 0 $a Thompson, Gregory B. $e committee member
790 1 0 $a Mewes, Tim $e committee member
790 1 0 $a LeClair, Patrick R. $e committee member
790 1 0 $a Vaidya, Uday K. $e committee member
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