劉耿銘

80奈米對稱與非對稱n型金氧半場效電晶體及多晶矽奈米線電晶體之模擬 = = Simulation of 80-nm Symmetric with Asymmetric n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors and Poly-Si Nanowire Transistors / by: 潘彥瑜; 劉耿銘 (Language materials, printed)

N型無接面雙閘極奈米線電晶體之模擬 = = Simulation of N-Type Junctionless Double-Gate Poly-Si Nanowire Transistors / by: 劉耿銘; 彭康平; Peng, Kang-Ping; Liu, Keng-Min (Language materials, printed)

N型雙閘極多晶矽奈米線電晶體之模擬 = = Simulation of N-type Double-gated Poly-Si Nanowire Transistors / by: 劉耿銘; 林資硯; Lin, Zi-Yan; Liu, Keng-Ming (Language materials, printed)

鰭式場效電晶體線邊緣粗糙效應之模擬 / by: 劉耿銘; 張耀文; Chang, Yao-Wen; Liu, Keng-Ming (Language materials, printed)

30奈米以下絕緣體上多閘極金氧半場效電晶體模擬之研究 = = Investigation of the Dimension Effects of 30-nm Below Multiple-Gate SOI MOSFETs by TCAD Simulation / by: 謝永裕; 劉耿銘 (Language materials, printed)

使用雜訊方法及蒙地卡羅方法來模擬隨機摻雜造成之變異 / by: 劉耿銘; Tsai, Meng-Han; 蔡孟翰; Liu, Keng-Ming (Language materials, printed)

80奈米金氧半場效電晶體中離子佈植最佳化之模擬及初步探討蒙地卡羅離子佈植之模擬 = = Simulation of Ion Implantation Optimization for the 80-nm Metal-Oxide-Semiconductor Field-Effect Transistor and Preliminary Study of Monte Carlo Ion Implant Simulation / by: 許勝富; 劉耿銘 (Language materials, printed)