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Wide bandgap semiconductor electroni...

Singisetti, Uttam.

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Wide bandgap semiconductor electronics and devices

Record Type:	Electronic resources : Monograph/item
Title/Author:	Wide bandgap semiconductor electronics and devices/ editor, Uttam Singisetti, Towhidur Razzak, Yuewei Zhang.
other author:	Singisetti, Uttam.
Published:	Singapore :World Scientific, : c2020.,
Description:	1 online resource (260 p.) :ill.
Subject:	Wide gap semiconductors. -
Online resource:	https://www.worldscientific.com/worldscibooks/10.1142/11719#t=toc
ISBN:	9789811216480

Wide bandgap semiconductor electronics and devices
Wide bandgap semiconductor electronics and devices[electronic resource] /editor, Uttam Singisetti, Towhidur Razzak, Yuewei Zhang. - 1st ed. - Singapore :World Scientific,c2020. - 1 online resource (260 p.) :ill. - Selected topics in electronics and systems ;v. 63.

Includes bibliographical references and index.

"With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream. Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike. This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond."--Publisher's website.

Mode of access: World Wide Web.

ISBN: 9789811216480Subjects--Topical Terms:

770530
Wide gap semiconductors.

LC Class. No.: TK7871.85 / .W54 2020

Dewey Class. No.: 621.38152

Wide bandgap semiconductor electronics and devices
LDR:02481cmm a2200289 a 4500 001 2248054
003 WSP
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007 cr cnu---unuuu
008 211227s2020 si a ob 000 0 eng d
020 $a 9789811216480 $q (ebook)
020 $z 9789811216473 $q (hbk.)
035 $a 000011719
040 $a WSPC $b eng $c WSPC
050 0 4 $a TK7871.85 $b .W54 2020
082 0 4 $a 621.38152 $2 23
245 0 0 $a Wide bandgap semiconductor electronics and devices $h [electronic resource] / $c editor, Uttam Singisetti, Towhidur Razzak, Yuewei Zhang.
250 $a 1st ed.
260 $a Singapore : $b World Scientific, $c c2020.
300 $a 1 online resource (260 p.) : $b ill.
490 1 $a Selected topics in electronics and systems ; $v v. 63
504 $a Includes bibliographical references and index.
520 $a "With the dawn of Gallium Oxide (Ga2O₃) and Aluminum Gallium Nitride (AlGaN) electronics and the commercialization of Gallium Nitride (GaN) and Silicon Carbide (SiC) based devices, the field of wide bandgap materials and electronics has never been more vibrant and exciting than it is now. Wide bandgap semiconductors have had a strong presence in the research and development arena for many years. Recently, the increasing demand for high efficiency power electronics and high speed communication electronics, together with the maturity of the synthesis and fabrication of wide bandgap semicon-ductors, has catapulted wide bandgap electronics and optoelectronics into the mainstream. Wide bandgap semiconductors exhibit excellent material properties, which can potentially enable power device operation at higher efficiency, higher temperatures, voltages, and higher switching speeds than current Si technology. This edited volume will serve as a useful reference for researchers in this field -- newcomers and experienced alike. This book discusses a broad range of topics including fundamental transport studies, growth of high-quality films, advanced materials characterization, device modeling, high frequency, high voltage electronic devices and optical devices written by the experts in their respective fields. They also span the whole spectrum of wide bandgap materials including AlGaN, Ga2O₃and diamond."--Publisher's website.
538 $a Mode of access: World Wide Web.
538 $a System requirements: Adobe Acrobat Reader.
588 $a Description based on print version record.
650 0 $a Wide gap semiconductors. $3 770530
650 0 $a Power semiconductors. $3 1047981
700 1 $a Singisetti, Uttam. $3 3512750
700 1 $a Razzak, Towhidur. $3 3512751
700 1 $a Zhang, Yuewei. $3 3512752
856 4 0 $u https://www.worldscientific.com/worldscibooks/10.1142/11719#t=toc