東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back

Switch To: Labeled | MARC Mode | ISBD

Fundamentals of bias temperature ins...

Mahapatra, Souvik.

Linked to FindBook

Google Book

Amazon

博客來

Fundamentals of bias temperature instability in MOS transistors = characterization methods, process and materials impact, DC and AC modeling /

Record Type:	Electronic resources : Monograph/item
Title/Author:	Fundamentals of bias temperature instability in MOS transistors/ edited by Souvik Mahapatra.
Reminder of title:	characterization methods, process and materials impact, DC and AC modeling /
other author:	Mahapatra, Souvik.
Published:	New Delhi :Springer India : : 2016.,
Description:	xvi, 269 p. :ill., digital ;24 cm.
[NT 15003449]:	Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation - Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation-Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
Contained By:	Springer eBooks
Subject:	Metal oxide semiconductor field-effect transistors. -
Online resource:	http://dx.doi.org/10.1007/978-81-322-2508-9
ISBN:	9788132225089$q(electronic bk.)

Fundamentals of bias temperature instability in MOS transistors = characterization methods, process and materials impact, DC and AC modeling /
Fundamentals of bias temperature instability in MOS transistorscharacterization methods, process and materials impact, DC and AC modeling /[electronic resource] :edited by Souvik Mahapatra. - New Delhi :Springer India :2016. - xvi, 269 p. :ill., digital ;24 cm. - Springer series in advanced microelectronics,v.521437-0387 ;. - Springer series in advanced microelectronics ;33..

Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation - Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation-Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.

This book aims to cover different aspects of Bias Temperature Instability (BTI) BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress, and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles, and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

ISBN: 9788132225089$q(electronic bk.)

Standard No.: 10.1007/978-81-322-2508-9doiSubjects--Topical Terms:

553297
Metal oxide semiconductor field-effect transistors.

LC Class. No.: TK7871.95 / .F86 2016

Dewey Class. No.: 621.3815284

Fundamentals of bias temperature instability in MOS transistors = characterization methods, process and materials impact, DC and AC modeling /
LDR:03467nmm a2200325 a 4500 001 2028644
003 DE-He213
005 20160715152813.0
006 m d
007 cr nn 008maaau
008 160908s2016 ii s 0 eng d
020 $a 9788132225089$q(electronic bk.)
020 $a 9788132225072$q(paper)
024 7 $a 10.1007/978-81-322-2508-9 $2 doi
035 $a 978-81-322-2508-9
040 $a GP $c GP
041 0 $a eng
050 4 $a TK7871.95 $b .F86 2016
072 7 $a TJFC $2 bicssc
072 7 $a TEC008010 $2 bisacsh
082 0 4 $a 621.3815284 $2 23
090 $a TK7871.95 $b .F981 2016
245 0 0 $a Fundamentals of bias temperature instability in MOS transistors $h [electronic resource] : $b characterization methods, process and materials impact, DC and AC modeling / $c edited by Souvik Mahapatra.
260 $a New Delhi : $b Springer India : $b Imprint: Springer, $c 2016.
300 $a xvi, 269 p. : $b ill., digital ; $c 24 cm.
490 1 $a Springer series in advanced microelectronics, $x 1437-0387 ; $v v.52
505 0 $a Introduction: Bias Temperature Instability (BTI) in N and P Channel MOSFETs -- Characterization Methods for BTI Degradation and Associated Gate Insulator Defects -- Physical Mechanism of BTI Degradation - Direct Estimation of Trap Generation and Trapping -- Physical Mechanism of BTI Degradation-Modeling of Process and Material Dependence -- Reaction-Diffusion Model -- Modeling of DC and AC NBTI Degradation and Recovery for SiON and HKMG MOSFETs -- Index.
520 $a This book aims to cover different aspects of Bias Temperature Instability (BTI) BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life, and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress, and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles, and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.
650 0 $a Metal oxide semiconductor field-effect transistors. $3 553297
650 1 4 $a Engineering. $3 586835
650 2 4 $a Circuits and Systems. $3 896527
650 2 4 $a Electronics and Microelectronics, Instrumentation. $3 893838
650 2 4 $a Solid State Physics. $3 1066374
700 1 $a Mahapatra, Souvik. $3 2179170
710 2 $a SpringerLink (Online service) $3 836513
773 0 $t Springer eBooks
830 0 $a Springer series in advanced microelectronics ; $v 33. $3 1565974
856 4 0 $u http://dx.doi.org/10.1007/978-81-322-2508-9
950 $a Engineering (Springer-11647)