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Instability-Driven Phase Separation ...

Miroshnik, Leonid,

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Instability-Driven Phase Separation for Quantum Structure Formation in III-V Semiconductors /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Instability-Driven Phase Separation for Quantum Structure Formation in III-V Semiconductors // Leonid Miroshnik.
作者:	Miroshnik, Leonid,
面頁冊數:	1 electronic resource (144 pages)
附註:	Source: Dissertations Abstracts International, Volume: 86-12, Section: B.
Contained By:	Dissertations Abstracts International86-12B.
標題:	Chemical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31840987
ISBN:	9798280777736

Instability-Driven Phase Separation for Quantum Structure Formation in III-V Semiconductors /
Miroshnik, Leonid,

Instability-Driven Phase Separation for Quantum Structure Formation in III-V Semiconductors /Leonid Miroshnik. - 1 electronic resource (144 pages)

Source: Dissertations Abstracts International, Volume: 86-12, Section: B.

High temperature phase instability limits the performance of III-V zinc blende semiconductor devices. A technique using an encapsulant and sacrificial layer is developed to reduce thermal degradation by group V sublimation during thermal processing of InGaAs/GaAs structures. This technique is successful in preventing As sublimation and preserving an atomically smooth surface required for surface-sensitive characterization. The degradation of the GaAsSb/InP interface by phase separation is studied. Significant interdiffusion and intermixing occurs due to the formation of a molten InSb at the interface. The intermixing is driven by phase separation and melting of the InSb interfacial layer that enhances atomic mobility. Externally applied stress by SiNx is used to adjust the strain within the GaAsSb epilayer from compressive to tensile during high-temperature annealing. A critical biaxial strain appears to exist that strongly affects the morphology of the phase separated regions, while slowing down the degradation kinetics.

English

ISBN: 9798280777736Subjects--Topical Terms:

560457
Chemical engineering.
Subjects--Index Terms:

Phase separation

Instability-Driven Phase Separation for Quantum Structure Formation in III-V Semiconductors /
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520 $a High temperature phase instability limits the performance of III-V zinc blende semiconductor devices. A technique using an encapsulant and sacrificial layer is developed to reduce thermal degradation by group V sublimation during thermal processing of InGaAs/GaAs structures. This technique is successful in preventing As sublimation and preserving an atomically smooth surface required for surface-sensitive characterization. The degradation of the GaAsSb/InP interface by phase separation is studied. Significant interdiffusion and intermixing occurs due to the formation of a molten InSb at the interface. The intermixing is driven by phase separation and melting of the InSb interfacial layer that enhances atomic mobility. Externally applied stress by SiNx is used to adjust the strain within the GaAsSb epilayer from compressive to tensile during high-temperature annealing. A critical biaxial strain appears to exist that strongly affects the morphology of the phase separated regions, while slowing down the degradation kinetics.
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650 4 $a Chemical engineering. $3 560457
650 4 $a Applied physics. $3 3343996
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Materials science. $3 543314
653 $a Phase separation
653 $a Semiconductors
653 $a Phase stability
653 $a Raman spectroscopy
653 $a Molecular beam epitaxy
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