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Characterization of Efficiency-Limit...

Ochoa Bueno, Jorge Fernando,

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Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy // Jorge Fernando Ochoa Bueno.
作者:	Ochoa Bueno, Jorge Fernando,
面頁冊數:	1 electronic resource (144 pages)
附註:	Source: Dissertations Abstracts International, Volume: 86-11, Section: B.
Contained By:	Dissertations Abstracts International86-11B.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31993601
ISBN:	9798314846490

Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy /
Ochoa Bueno, Jorge Fernando,

Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy /Jorge Fernando Ochoa Bueno. - 1 electronic resource (144 pages)

Source: Dissertations Abstracts International, Volume: 86-11, Section: B.

Silicon solar cells dominate the photovoltaic industry due to their reliability, efficiency, and cost-effectiveness. Both monocrystalline and polycrystalline variants have achieved notable efficiency improvements. However, there remains significant innovation potential. Advances in anti-reflective coatings, passivation layers, and novel cell architectures can enhance light absorption, reduce charge recombination, and improve carrier collection, paving the way for higher efficiency gains through continued research and development.The future of silicon solar cells lies in n-type silicon, which offers advantages like reduced sensitivity to impurities, lower recombination rates, and better radiation resistance. Transitioning from traditional p-type cells to n-type requires extensive performance and durability testing. Proving the reliability of n-type technologies is essential for scaling production to the Tera-Watt level.Minority-carrier lifetime analysis is a powerful tool for examining intrinsic and extrinsic recombination processes affecting device performance. Temperature- and injection-dependent lifetime spectroscopy (TIDLS) offers insights into these processes and supports process control, device optimization, and research into solar cell physics.This work is divided into three key studies. First, the impact of high-temperature annealing on n-type Cz-Si is investigated, focusing on managing intrinsic point defects to mitigate carrier lifetime degradation during solar cell fabrication. Findings challenge the assumption that measured effective lifetime directly correlates to bulk lifetime and demonstrate the effectiveness of lifetime spectroscopy in characterizing bulk defects.Second, the degradation of passivation quality in symmetric c-Si/a-Si:H(i) stacks is analyzed under stress conditions like temperature and illumination. Results link increased recombination to the loss of chemical passivation at the c-Si/a-Si:H interface, likely due to hydrogen redistribution. This degradation corresponds to field data showing open-circuit voltage loss in heterojunction solar cells.Finally, the silicon Auger lifetime is measured across temperatures from 30 to 180°C and under various carrier injection levels. An empirical temperature-dependent parametrization is proposed to improve device modeling, including efficiency assessments and defect characterization. These findings highlight the importance of incorporating temperature dependence into Auger lifetime models, essential for understanding efficiency limits under real-world conditions.

English

ISBN: 9798314846490Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Defects

Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy /
LDR:04094nmm a22004453i 4500 001 2434866
005 20251001062543.5
006 m o d
007 cr|nu||||||||
008 261011s2025 miu||||||m |||||||eng d
020 $a 9798314846490
035 $a (MiAaPQD)AAI31993601
035 $a AAI31993601
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Ochoa Bueno, Jorge Fernando, $e author. $3 3824996
245 1 0 $a Characterization of Efficiency-Limiting Recombination Mechanism in Crystalline Silicon Solar Cells by Advanced Lifetime Spectroscopy / $c Jorge Fernando Ochoa Bueno.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2025
300 $a 1 electronic resource (144 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 86-11, Section: B.
500 $a Advisors: Bertoni, Mariana Committee members: Holman, Zachary; Kozicki, Michael; Goryll, Michael.
502 $b Ph.D. $c Arizona State University $d 2025.
520 $a Silicon solar cells dominate the photovoltaic industry due to their reliability, efficiency, and cost-effectiveness. Both monocrystalline and polycrystalline variants have achieved notable efficiency improvements. However, there remains significant innovation potential. Advances in anti-reflective coatings, passivation layers, and novel cell architectures can enhance light absorption, reduce charge recombination, and improve carrier collection, paving the way for higher efficiency gains through continued research and development.The future of silicon solar cells lies in n-type silicon, which offers advantages like reduced sensitivity to impurities, lower recombination rates, and better radiation resistance. Transitioning from traditional p-type cells to n-type requires extensive performance and durability testing. Proving the reliability of n-type technologies is essential for scaling production to the Tera-Watt level.Minority-carrier lifetime analysis is a powerful tool for examining intrinsic and extrinsic recombination processes affecting device performance. Temperature- and injection-dependent lifetime spectroscopy (TIDLS) offers insights into these processes and supports process control, device optimization, and research into solar cell physics.This work is divided into three key studies. First, the impact of high-temperature annealing on n-type Cz-Si is investigated, focusing on managing intrinsic point defects to mitigate carrier lifetime degradation during solar cell fabrication. Findings challenge the assumption that measured effective lifetime directly correlates to bulk lifetime and demonstrate the effectiveness of lifetime spectroscopy in characterizing bulk defects.Second, the degradation of passivation quality in symmetric c-Si/a-Si:H(i) stacks is analyzed under stress conditions like temperature and illumination. Results link increased recombination to the loss of chemical passivation at the c-Si/a-Si:H interface, likely due to hydrogen redistribution. This degradation corresponds to field data showing open-circuit voltage loss in heterojunction solar cells.Finally, the silicon Auger lifetime is measured across temperatures from 30 to 180°C and under various carrier injection levels. An empirical temperature-dependent parametrization is proposed to improve device modeling, including efficiency assessments and defect characterization. These findings highlight the importance of incorporating temperature dependence into Auger lifetime models, essential for understanding efficiency limits under real-world conditions.
546 $a English
590 $a School code: 0010
650 4 $a Electrical engineering. $3 649834
650 4 $a Alternative energy. $3 3436775
650 4 $a Applied physics. $3 3343996
653 $a Defects
653 $a Lifetime
653 $a Photovoltaics
653 $a Reliability
653 $a Silicon
653 $a Solar cell physics
690 $a 0544
690 $a 0363
690 $a 0215
710 2 $a Arizona State University. $b Electrical Engineering. $e degree granting institution. $3 3771820
720 1 $a Bertoni, Mariana $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-11B.
790 $a 0010
791 $a Ph.D.
792 $a 2025
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31993601