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Gan-Based Robust Low-Noise Amplifier...
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Kazan, Oguz,
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Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
紀錄類型:
書目-電子資源 : Monograph/item
正題名/作者:
Gan-Based Robust Low-Noise Amplifier =/ Oguz Kazan.
其他題名:
Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
作者:
Kazan, Oguz,
面頁冊數:
1 electronic resource (111 pages)
附註:
Source: Masters Abstracts International, Volume: 86-05.
Contained By:
Masters Abstracts International86-05.
標題:
Load. -
電子資源:
https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31678427
ISBN:
9798346370635
Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
Kazan, Oguz,
Gan-Based Robust Low-Noise Amplifier =
Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /Oguz Kazan. - 1 electronic resource (111 pages)
Source: Masters Abstracts International, Volume: 86-05.
This thesis presents the theory, design and evaluation of low-noise amplifiers (LNAs) with high input power immunity, built on GaN/SiC substrate. Two separate X-band (8-12 GHz) LNAs are designed and sent out for production. After the manufactured samples are received, they are measured and evaluated. Measurement results show that both LNAs have a gain of more than 20 dB. One LNA achieves a noise figure of less than 2 dB, while the second one has a noise figure of less than 2.5 dB. Using three-stage topology, high linearity is achieved with an OIP3 of 29 dBm at 0.6 W power dissipation for one of the LNAs, and an OIP3 of 28.3 dBm is achieved at 0.36 W power dissipation for the other LNA. The robustness tests show that the circuits survive 2.5 W (34 dBm) input power. This survivability performance enables the use of presented LNAs in electronic warfare systems without a need of a diode limiter. With a size of just 2.8 x 1.3 mm2 (3.6 mm2) the presented LNAs are compact when compared to the state of the art. The circuits are realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
English
ISBN: 9798346370635Subjects--Topical Terms:
3562902
Load.
Gan-Based Robust Low-Noise Amplifier = = Gan Tabanli Dayanikli Alcak Gurultulu Yukseltec /
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This thesis presents the theory, design and evaluation of low-noise amplifiers (LNAs) with high input power immunity, built on GaN/SiC substrate. Two separate X-band (8-12 GHz) LNAs are designed and sent out for production. After the manufactured samples are received, they are measured and evaluated. Measurement results show that both LNAs have a gain of more than 20 dB. One LNA achieves a noise figure of less than 2 dB, while the second one has a noise figure of less than 2.5 dB. Using three-stage topology, high linearity is achieved with an OIP3 of 29 dBm at 0.6 W power dissipation for one of the LNAs, and an OIP3 of 28.3 dBm is achieved at 0.36 W power dissipation for the other LNA. The robustness tests show that the circuits survive 2.5 W (34 dBm) input power. This survivability performance enables the use of presented LNAs in electronic warfare systems without a need of a diode limiter. With a size of just 2.8 x 1.3 mm2 (3.6 mm2) the presented LNAs are compact when compared to the state of the art. The circuits are realized using the 0.25 μm Power GaN/SiC HEMT process by WIN Semiconductor.
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