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Charge and Strain Engineering of Fer...

Hao, Yifei,

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Charge and Strain Engineering of Ferroic and Correlated Oxides /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Charge and Strain Engineering of Ferroic and Correlated Oxides // Yifei Hao.
作者:	Hao, Yifei,
面頁冊數:	1 electronic resource (126 pages)
附註:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
標題:	Physics. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31243898
ISBN:	9798382338569

Charge and Strain Engineering of Ferroic and Correlated Oxides /
Hao, Yifei,

Charge and Strain Engineering of Ferroic and Correlated Oxides /Yifei Hao. - 1 electronic resource (126 pages)

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

This dissertation presents a comprehensive study of the charge and strain effects on the electronic and magnetic properties of epitaxial ferroic and correlated oxide thin films and heterostructures. We perform the planar Hall effect to quantify the magneto crystalline anisotropy (MCA) in epitaxial La1-xSrxMnO3 films (x = 0.2 and 0.33) deposited on SrTiO3 substrates. The biaxial magnetic anisotropy energy of L0.67Sr0.33MnO3 is about 17% larger than La0.8Sr0.2MnO3. By comparing with the theoretically predicted values, we have decoupled the doping and strain effects on MCA. We examine the transition from the ferroelectric (FE) to dielectric (DE) state in PbZr0.2Ti0.8O3/SrTiO3 (PZT/STO) heterostructures via probing the polarization switching and transient negative capacitance (NC) effects. With decreasing FE-DE thickness ratio (r), the remanent polarization of the stack decreases monotonically and exhibits an abrupt drop at the critical ratio of rc = 8-7, which is consistent with the Landau theory modeling of the free energy profile. Upon polarization switching, we observe the charge damping associated with the transient NC mode within 2 μs. The transient NC mode is quenched in the r = 6 sample, consistent with the suppressed ferroelectric order. We systematically study the ferroelectric field effect in RNiO3 (R = Sm, Nd, La) and RNiO3/La0.67Sr0.33MnO3 (LSMO) channels gated by PZT. For single-layer channels, switching the PZT polarization induces a metal-insulator transition in the 1.5 nm LaNiO3 channel. The resistance switching ratio ΔR/Ron peaks near the electrical dead layer thickness, with the highest ΔR/Ron of 1,619% at 300 K observed in 0.8 nm LaNiO3. With the same channel thickness, devices with RNiO3/LSMO composite channels exhibit up to three orders of magnitude higher ΔR/Ron. A record high ΔR/Ron of 38,540% is observed in the 1 nm LaNiO3/0.8 nm LSMO bilayer channel, which has been attributed to the interfacial charge transfer effect that reduces the net carrier density in RNiO3 without compromising the screening of depolarization field in PZT. Our study addresses one of the critical material challenges that limit the application potential of epitaxial ferroelectric-gated Mott transistors.

English

ISBN: 9798382338569Subjects--Topical Terms:

516296
Physics.
Subjects--Index Terms:

Correlated oxide

Charge and Strain Engineering of Ferroic and Correlated Oxides /
LDR:03720nmm a22004453i 4500 001 2434079
005 20250905091339.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798382338569
035 $a (MiAaPQD)AAI31243898
035 $a AAI31243898
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Hao, Yifei, $e author. $3 3823941
245 1 0 $a Charge and Strain Engineering of Ferroic and Correlated Oxides / $c Yifei Hao.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (126 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
500 $a Advisors: Hong, Xia Committee members: Adenwalla, Shireen; Xu, Xiaoshan; Tsymbal, Evgeny; Shield, Jeffery.
502 $b Ph.D. $c The University of Nebraska - Lincoln $d 2024.
520 $a This dissertation presents a comprehensive study of the charge and strain effects on the electronic and magnetic properties of epitaxial ferroic and correlated oxide thin films and heterostructures. We perform the planar Hall effect to quantify the magneto crystalline anisotropy (MCA) in epitaxial La1-xSrxMnO3 films (x = 0.2 and 0.33) deposited on SrTiO3 substrates. The biaxial magnetic anisotropy energy of L0.67Sr0.33MnO3 is about 17% larger than La0.8Sr0.2MnO3. By comparing with the theoretically predicted values, we have decoupled the doping and strain effects on MCA. We examine the transition from the ferroelectric (FE) to dielectric (DE) state in PbZr0.2Ti0.8O3/SrTiO3 (PZT/STO) heterostructures via probing the polarization switching and transient negative capacitance (NC) effects. With decreasing FE-DE thickness ratio (r), the remanent polarization of the stack decreases monotonically and exhibits an abrupt drop at the critical ratio of rc = 8-7, which is consistent with the Landau theory modeling of the free energy profile. Upon polarization switching, we observe the charge damping associated with the transient NC mode within 2 μs. The transient NC mode is quenched in the r = 6 sample, consistent with the suppressed ferroelectric order. We systematically study the ferroelectric field effect in RNiO3 (R = Sm, Nd, La) and RNiO3/La0.67Sr0.33MnO3 (LSMO) channels gated by PZT. For single-layer channels, switching the PZT polarization induces a metal-insulator transition in the 1.5 nm LaNiO3 channel. The resistance switching ratio ΔR/Ron peaks near the electrical dead layer thickness, with the highest ΔR/Ron of 1,619% at 300 K observed in 0.8 nm LaNiO3. With the same channel thickness, devices with RNiO3/LSMO composite channels exhibit up to three orders of magnitude higher ΔR/Ron. A record high ΔR/Ron of 38,540% is observed in the 1 nm LaNiO3/0.8 nm LSMO bilayer channel, which has been attributed to the interfacial charge transfer effect that reduces the net carrier density in RNiO3 without compromising the screening of depolarization field in PZT. Our study addresses one of the critical material challenges that limit the application potential of epitaxial ferroelectric-gated Mott transistors.
546 $a English
590 $a School code: 0138
650 4 $a Physics. $3 516296
650 4 $a Electromagnetics. $3 3173223
650 4 $a Physical chemistry. $3 1981412
653 $a Correlated oxide
653 $a Dielectric
653 $a Ferroelectric field
653 $a Mott transistor
653 $a Planar Hall effect
653 $a Resistance modulation
690 $a 0605
690 $a 0607
690 $a 0494
710 2 $a The University of Nebraska - Lincoln. $b Physics & Astronomy. $e degree granting institution. $3 3822685
720 1 $a Hong, Xia $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 85-11B.
790 $a 0138
791 $a Ph.D.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31243898