東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁 到查詢結果 [ null ]

切換: 標籤 | MARC模式 | ISBD

Reversible and Irreversible Effects ...

Kossak, Alexander E.,

FindBook

Google Book

Amazon

博客來

Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization // Alexander E Kossak.
作者:	Kossak, Alexander E.,
面頁冊數:	1 electronic resource (154 pages)
附註:	Source: Dissertations Abstracts International, Volume: 86-08, Section: B.
Contained By:	Dissertations Abstracts International86-08B.
標題:	Random access memory. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31850976
ISBN:	9798304950060

Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization /
Kossak, Alexander E.,

Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization /Alexander E Kossak. - 1 electronic resource (154 pages)

Source: Dissertations Abstracts International, Volume: 86-08, Section: B.

Access to data, and its storage, is annually becoming of greater concern to consumers, companies, and governments. As the volume and generation of data grow, the technology that writes, reads, and secures it must become faster, more compact, and more efficient. Creating energy-efficient data storage and logic devices has therefore become an urgent research focus. Magnetic storage, through voltage-controlled magnetism (VCM), uses orders of magnitude less energy than traditional current-controlled static and dynamic randomaccess memory. Herein, VCM is explored through the lens of magneto-ionics - a low-power, reversible, and non-volatile approach to the electric field control of magnetism. This thesis advances the understanding and optimization of magneto-ionic systems, focusing on the reversible and irreversible intricacies of the voltage-control of magnetic properties. In the initial exploration of Pd/Co/Pd trilayers via solid-state hydrogen-ion gating, the mechanism which toggles magnetic anisotropy is proven and quantitative values for the magneto-ionic modulation of magnetization and effective anisotropy are provided. The simple heterostructure also demonstrates the modulation of novel magnetic properties including spin angular momentum, orbital angular momentum, and proximity-induced moments. This understanding provides the foundation for a systematic optimization of Co/Pd multilayer heterostructures which achieves the highest reversible solid-state efficiency to date. Guided by this understanding, magneto-ionic gating is harnessed for modulation of the RKKY interlayer exchange interaction. This small applied bias voltage enables fully reversible, sub-millisecond, 180◦ voltage-controlled switching of the magnetic order. Moreover, by engineering the magnetic properties of the heterostructure, it enables field-free switching, a highly sought-after device property for magnetic memory. These findings not only contribute to the fundamental understanding of magneto-ionic phenomena, but also hold promise for the development of next-generation spintronic devices and non von Neumann computing architectures. By disentangling the complexities of the magneto-ionic manipulation of the exchange, anisotropy, and magnetization of magnetic materials, this thesis paves the way for enhanced functionality and performance in spin-based technologies, offering promising avenues for future research.

English

ISBN: 9798304950060Subjects--Topical Terms:

623617
Random access memory.
Subjects--Index Terms:

Voltage-controlled magnetism

Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization /
LDR:03810nmm a22004093i 4500 001 2433809
005 20250905091018.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798304950060
035 $a (MiAaPQD)AAI31850976
035 $a (MiAaPQD)MIT17211155319
035 $a AAI31850976
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Kossak, Alexander E., $e author. $3 3823567
245 1 0 $a Reversible and Irreversible Effects of Magneto-Ionic Gating: Exchange, Anisotropy, and Magnetization / $c Alexander E Kossak.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (154 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 86-08, Section: B.
500 $a Advisors: Beach, Geoffrey S. D.
502 $b Ph.D. $c Massachusetts Institute of Technology $d 2024.
520 $a Access to data, and its storage, is annually becoming of greater concern to consumers, companies, and governments. As the volume and generation of data grow, the technology that writes, reads, and secures it must become faster, more compact, and more efficient. Creating energy-efficient data storage and logic devices has therefore become an urgent research focus. Magnetic storage, through voltage-controlled magnetism (VCM), uses orders of magnitude less energy than traditional current-controlled static and dynamic randomaccess memory. Herein, VCM is explored through the lens of magneto-ionics - a low-power, reversible, and non-volatile approach to the electric field control of magnetism. This thesis advances the understanding and optimization of magneto-ionic systems, focusing on the reversible and irreversible intricacies of the voltage-control of magnetic properties. In the initial exploration of Pd/Co/Pd trilayers via solid-state hydrogen-ion gating, the mechanism which toggles magnetic anisotropy is proven and quantitative values for the magneto-ionic modulation of magnetization and effective anisotropy are provided. The simple heterostructure also demonstrates the modulation of novel magnetic properties including spin angular momentum, orbital angular momentum, and proximity-induced moments. This understanding provides the foundation for a systematic optimization of Co/Pd multilayer heterostructures which achieves the highest reversible solid-state efficiency to date. Guided by this understanding, magneto-ionic gating is harnessed for modulation of the RKKY interlayer exchange interaction. This small applied bias voltage enables fully reversible, sub-millisecond, 180◦ voltage-controlled switching of the magnetic order. Moreover, by engineering the magnetic properties of the heterostructure, it enables field-free switching, a highly sought-after device property for magnetic memory. These findings not only contribute to the fundamental understanding of magneto-ionic phenomena, but also hold promise for the development of next-generation spintronic devices and non von Neumann computing architectures. By disentangling the complexities of the magneto-ionic manipulation of the exchange, anisotropy, and magnetization of magnetic materials, this thesis paves the way for enhanced functionality and performance in spin-based technologies, offering promising avenues for future research.
546 $a English
590 $a School code: 0753
650 4 $a Random access memory. $3 623617
650 4 $a Humidity. $3 3559498
650 4 $a Textbooks. $3 3561685
650 4 $a Electrons. $3 516581
650 4 $a Spectrum analysis. $3 520440
650 4 $a Fourier transforms. $3 3545926
650 4 $a Magnetic fields. $3 660770
650 4 $a Microscopy. $3 540544
650 4 $a Anisotropy. $3 596747
650 4 $a Magnetism. $3 524508
650 4 $a Python. $3 3201289
650 4 $a Energy consumption. $3 631630
650 4 $a Materials science. $3 543314
650 4 $a Engineering. $3 586835
653 $a Voltage-controlled magnetism
653 $a Anisotropy
653 $a Magnetization
690 $a 0794
690 $a 0537
710 2 $a Massachusetts Institute of Technology. $b Department of Materials Science and Engineering. $e degree granting institution. $3 3823568
720 1 $a Beach, Geoffrey S. D. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-08B.
790 $a 0753
791 $a Ph.D.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31850976