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Solid-State Plasma Switches for Reco...

Fisher, Alden,

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Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics /

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics // Alden Fisher.
作者:	Fisher, Alden,
面頁冊數:	1 electronic resource (174 pages)
附註:	Source: Dissertations Abstracts International, Volume: 86-06, Section: B.
Contained By:	Dissertations Abstracts International86-06B.
標題:	Copper. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31786082
ISBN:	9798346830825

Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics /
Fisher, Alden,

Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics /Alden Fisher. - 1 electronic resource (174 pages)

Source: Dissertations Abstracts International, Volume: 86-06, Section: B.

Conventional RF switching technologies struggle to simultaneously achieve high-power handling, low loss, high isolation, broadband operation, quick reconfiguration, high linearity, and low cost, which are desirable for many applications, including communications, radar, and sensors. Moreover, they require electrical bias networks, which degrade performance and, in many cases, inhibit wideband applications, including DC operation. On the other hand, plasma (photoconductive) switches use an optical bias to generate free charge carriers. Recently these switches have begun to not only rival conventional technologies in terms of performance metrics such as switching speeds and loss but have exceeded what is possible in terms of power handling. This work details the strides made in placing solid-state plasma technologies at the forefront of advanced, high-power switching applications including a novel high-power tuner and an absorptive/reflective SPnT switch. In various form factors, SSP has achieved analog control of loss as low as 0.09 dB and isolation as high as 54 dB, linearity of 68.8 dBm (IP3), 110 GHz instantaneous bandwidth, including DC, switching speeds as low as 3.5 us, 100+ W power handling, and 30+ W hot switching. In addition, comprehensive physics modeling has been developed to enable seamless design validation before fabrication commences. This thesis discusses the achievements and design considerations for creating optimized plasma switches and proposes a path for future applications.

English

ISBN: 9798346830825Subjects--Topical Terms:

1070053
Copper.
Subjects--Index Terms:

Electrical bias networks

Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics /
LDR:02878nmm a22003973i 4500 001 2432622
005 20250731101858.5
006 m o d
007 cr|nu||||||||
008 261011s2024 miu||||||m |||||||eng d
020 $a 9798346830825
035 $a (MiAaPQD)AAI31786082
035 $a (MiAaPQD)Purdue25674402
035 $a AAI31786082
040 $a MiAaPQD $b eng $c MiAaPQD $e rda
100 1 $a Fisher, Alden, $e author. $3 3821917
245 1 0 $a Solid-State Plasma Switches for Reconfigurable High-Power RF Electronics / $c Alden Fisher.
264 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2024
300 $a 1 electronic resource (174 pages)
336 $a text $b txt $2 rdacontent
337 $a computer $b c $2 rdamedia
338 $a online resource $b cr $2 rdacarrier
500 $a Source: Dissertations Abstracts International, Volume: 86-06, Section: B.
500 $a Advisors: Peroulis, Dimitrios Committee members: Semnani, Abbas; Jiao, Dan; Bhave, Sunil A.
502 $b Ph.D. $c Purdue University $d 2024.
520 $a Conventional RF switching technologies struggle to simultaneously achieve high-power handling, low loss, high isolation, broadband operation, quick reconfiguration, high linearity, and low cost, which are desirable for many applications, including communications, radar, and sensors. Moreover, they require electrical bias networks, which degrade performance and, in many cases, inhibit wideband applications, including DC operation. On the other hand, plasma (photoconductive) switches use an optical bias to generate free charge carriers. Recently these switches have begun to not only rival conventional technologies in terms of performance metrics such as switching speeds and loss but have exceeded what is possible in terms of power handling. This work details the strides made in placing solid-state plasma technologies at the forefront of advanced, high-power switching applications including a novel high-power tuner and an absorptive/reflective SPnT switch. In various form factors, SSP has achieved analog control of loss as low as 0.09 dB and isolation as high as 54 dB, linearity of 68.8 dBm (IP3), 110 GHz instantaneous bandwidth, including DC, switching speeds as low as 3.5 us, 100+ W power handling, and 30+ W hot switching. In addition, comprehensive physics modeling has been developed to enable seamless design validation before fabrication commences. This thesis discusses the achievements and design considerations for creating optimized plasma switches and proposes a path for future applications.
546 $a English
590 $a School code: 0183
650 4 $a Copper. $3 1070053
650 4 $a Silicon wafers. $3 3681738
650 4 $a Plasma. $3 877619
650 4 $a Lasers. $3 535503
650 4 $a Computer engineering. $3 621879
650 4 $a Electrical engineering. $3 649834
653 $a Electrical bias networks
653 $a Fabrication
690 $a 0544
690 $a 0464
710 2 $a Purdue University. $e degree granting institution. $3 3759105
720 1 $a Peroulis, Dimitrios $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-06B.
790 $a 0183
791 $a Ph.D.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31786082