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High-Temperature Gallium Oxide Devic...

Callahan, William A.,

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High-Temperature Gallium Oxide Devices: Improving Stability for Long-Term Operation /

Record Type:	Electronic resources : Monograph/item
Title/Author:	High-Temperature Gallium Oxide Devices: Improving Stability for Long-Term Operation // William A Callahan.
Author:	Callahan, William A.,
Description:	1 electronic resource (120 pages)
Notes:	Source: Dissertations Abstracts International, Volume: 86-05, Section: B.
Contained By:	Dissertations Abstracts International86-05B.
Subject:	Materials science. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31235482
ISBN:	9798346744047

High-Temperature Gallium Oxide Devices: Improving Stability for Long-Term Operation /
Callahan, William A.,

High-Temperature Gallium Oxide Devices: Improving Stability for Long-Term Operation /William A Callahan. - 1 electronic resource (120 pages)

Source: Dissertations Abstracts International, Volume: 86-05, Section: B.

Due to its high utility and low cost, power devices and components that utilize silicon are widespread. For common applications, this is sufficient. However, harsh environments (high temperatures, strongly oxidizing or reducing conditions) require a higher degree of thermal and chemical stability for reliable device operation. We are entering into a new generation of power electronic devices, dominated by wide-bandgap (WBG) and ultrawide-bandgap (UWBG) materials, where the strongest candidate to emerge as a serious competitor is gallium oxide (Ga2O3). The most stable polymorph, β-Ga2O3, offers a high degree of chemical and thermal stability, as well as the potential to withstand high voltages before failure.A significant amount of research has been conducted to improve the electrical performance of β-Ga2O3 devices, with an intense focus on optimizing the resilience to high electrical fields and the on-state performance, simultaneously. Very little is reported in the way of either high-temperature performance or long-term reliability in non-ambient conditions. The few demonstrations that defy this often use electrical contacts and interlayers that are not optimized for the conditions, invariably leading to performance degradation. In this thesis, I address this lack of reliability data by systematically examining current contact structures and redesigning them based on the fundamental principles of thermodynamics and kinetics of materials.I find that Ohmic contacts to Ga2O3 can be formed by using an ultrathin layer of Ti (5 nm) with a Au capping layer (100 nm). These contacts show remarkable stability and excellent Ohmic performance after both extensive thermal cycling between 25 and 550◦C in and long-term thermal soaking at 600 ◦C for >500 hours under vacuum conditions. Building on this, I then demonstrate reliable operation of Cr2O3:Mg/ β-Ga2O3 p-n heterojunction diodes for more than 140 hours at 600◦C. This experimental work is motivated by theoretical calculations that predict thermodynamically stable phase coexistence of n-Ga2O3 and p-Cr2O3 for an extremely wide range of temperatures and pO2. Finally, my work culminates with the demonstration of a hydrogen sensitive Pt /Cr2O3:Mg/ β-Ga2O3 p-n heterojunction diode operating continuously at 600◦C for over 1000 hours. I find that, while the sensor signal and the sensitivity degrade over time, the response to low concentration of hydrogen (500 / 1000 / 1500 ppm) remains for the entire duration of the experiment.This body of work addresses the lack of high-temperature reliability data for Ga2O3 devices. My work examines the current most common electrical contacts and structures that are used to fabricate devices for low-temperature operation, and redesigns them with a focus on high-temperature operation.

English

ISBN: 9798346744047Subjects--Topical Terms:

543314
Materials science.
Subjects--Index Terms:

Gallium oxide

High-Temperature Gallium Oxide Devices: Improving Stability for Long-Term Operation /
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502 $b Ph.D. $c Colorado School of Mines $d 2024.
520 $a Due to its high utility and low cost, power devices and components that utilize silicon are widespread. For common applications, this is sufficient. However, harsh environments (high temperatures, strongly oxidizing or reducing conditions) require a higher degree of thermal and chemical stability for reliable device operation. We are entering into a new generation of power electronic devices, dominated by wide-bandgap (WBG) and ultrawide-bandgap (UWBG) materials, where the strongest candidate to emerge as a serious competitor is gallium oxide (Ga2O3). The most stable polymorph, β-Ga2O3, offers a high degree of chemical and thermal stability, as well as the potential to withstand high voltages before failure.A significant amount of research has been conducted to improve the electrical performance of β-Ga2O3 devices, with an intense focus on optimizing the resilience to high electrical fields and the on-state performance, simultaneously. Very little is reported in the way of either high-temperature performance or long-term reliability in non-ambient conditions. The few demonstrations that defy this often use electrical contacts and interlayers that are not optimized for the conditions, invariably leading to performance degradation. In this thesis, I address this lack of reliability data by systematically examining current contact structures and redesigning them based on the fundamental principles of thermodynamics and kinetics of materials.I find that Ohmic contacts to Ga2O3 can be formed by using an ultrathin layer of Ti (5 nm) with a Au capping layer (100 nm). These contacts show remarkable stability and excellent Ohmic performance after both extensive thermal cycling between 25 and 550◦C in and long-term thermal soaking at 600 ◦C for >500 hours under vacuum conditions. Building on this, I then demonstrate reliable operation of Cr2O3:Mg/ β-Ga2O3 p-n heterojunction diodes for more than 140 hours at 600◦C. This experimental work is motivated by theoretical calculations that predict thermodynamically stable phase coexistence of n-Ga2O3 and p-Cr2O3 for an extremely wide range of temperatures and pO2. Finally, my work culminates with the demonstration of a hydrogen sensitive Pt /Cr2O3:Mg/ β-Ga2O3 p-n heterojunction diode operating continuously at 600◦C for over 1000 hours. I find that, while the sensor signal and the sensitivity degrade over time, the response to low concentration of hydrogen (500 / 1000 / 1500 ppm) remains for the entire duration of the experiment.This body of work addresses the lack of high-temperature reliability data for Ga2O3 devices. My work examines the current most common electrical contacts and structures that are used to fabricate devices for low-temperature operation, and redesigns them with a focus on high-temperature operation.
546 $a English
590 $a School code: 0052
650 4 $a Materials science. $3 543314
650 4 $a Applied physics. $3 3343996
653 $a Gallium oxide
653 $a High-temperature operation
653 $a Power electronics
653 $a Reliability
653 $a Stable contacts
690 $a 0794
690 $a 0215
710 2 $a Colorado School of Mines. $b Metallurgical and Materials Engineering. $e degree granting institution. $3 3815642
720 1 $a O'Hayre, Ryan P. $e degree supervisor.
720 1 $a Ginley, David S. $e degree supervisor.
773 0 $t Dissertations Abstracts International $g 86-05B.
790 $a 0052
791 $a Ph.D.
792 $a 2024
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=31235482