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GaN MMICs for Millimeter-Wave Front ...

Sonnenberg, Timothy Adam.

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GaN MMICs for Millimeter-Wave Front Ends = = Les circuits integres en nitrure de gallium (GaN) pour les extremites frontales en ondes millimetriques.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	GaN MMICs for Millimeter-Wave Front Ends =/
其他題名:	Les circuits integres en nitrure de gallium (GaN) pour les extremites frontales en ondes millimetriques.
作者:	Sonnenberg, Timothy Adam.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2024,
面頁冊數:	134 p.
附註:	Source: Dissertations Abstracts International, Volume: 85-11, Section: B.
Contained By:	Dissertations Abstracts International85-11B.
標題:	Electrical engineering. -
電子資源:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30992959
ISBN:	9798382717289

GaN MMICs for Millimeter-Wave Front Ends = = Les circuits integres en nitrure de gallium (GaN) pour les extremites frontales en ondes millimetriques.
Sonnenberg, Timothy Adam.

GaN MMICs for Millimeter-Wave Front Ends =Les circuits integres en nitrure de gallium (GaN) pour les extremites frontales en ondes millimetriques. - Ann Arbor : ProQuest Dissertations & Theses, 2024 - 134 p.

Source: Dissertations Abstracts International, Volume: 85-11, Section: B.

Thesis (Ph.D.)--University of Colorado at Boulder, 2024.

The body of work presented in this thesis addresses the need for higher-power W-band MMIC circuits to enable communications, radar and sensing at millimeter waves were spectrum allocation is still growing and evolving. This work is funded by the DARPA millimeter wave GaN maturation (MGM) program aiming to scale GaN devices and models for use in amplification and mixed signal circuits. To address the goal of the program, designs of fundamental front end circuits for functions including frequency translation, power amplification (PA), low noise amplification (LNA) and control are realized using 40nm GaN-on-SiC HEMTs. Integration of these different MMIC circuit components is explored to additionally determine the accuracy of the models in a system level operation.Demonstrated GaN MMIC circuits in the HRL T3 process at W-band include a three stage power-combined balanced amplifier, two frequency doublers, a balanced frequency tripler, 90º and 180º phase shifters, a three stage LNA and an on-chip T/R half duplex front end. The design methodology, device selection, device characterization, MMIC layout and measurement of each of these circuits is analyzed and discussed. A single-HEMT resistive mixer, power detector and full W-band Dicke radiometer are also designed and fabricated but remain to be measured. Results show viable high-performing GaN HEMT MMIC circuits which can be implemented in existing applications to increase power density and performance.

ISBN: 9798382717289Subjects--Topical Terms:

649834
Electrical engineering.
Subjects--Index Terms:

Front-end

GaN MMICs for Millimeter-Wave Front Ends = = Les circuits integres en nitrure de gallium (GaN) pour les extremites frontales en ondes millimetriques.
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520 $a The body of work presented in this thesis addresses the need for higher-power W-band MMIC circuits to enable communications, radar and sensing at millimeter waves were spectrum allocation is still growing and evolving. This work is funded by the DARPA millimeter wave GaN maturation (MGM) program aiming to scale GaN devices and models for use in amplification and mixed signal circuits. To address the goal of the program, designs of fundamental front end circuits for functions including frequency translation, power amplification (PA), low noise amplification (LNA) and control are realized using 40nm GaN-on-SiC HEMTs. Integration of these different MMIC circuit components is explored to additionally determine the accuracy of the models in a system level operation.Demonstrated GaN MMIC circuits in the HRL T3 process at W-band include a three stage power-combined balanced amplifier, two frequency doublers, a balanced frequency tripler, 90º and 180º phase shifters, a three stage LNA and an on-chip T/R half duplex front end. The design methodology, device selection, device characterization, MMIC layout and measurement of each of these circuits is analyzed and discussed. A single-HEMT resistive mixer, power detector and full W-band Dicke radiometer are also designed and fabricated but remain to be measured. Results show viable high-performing GaN HEMT MMIC circuits which can be implemented in existing applications to increase power density and performance.
520 $a Le corps de travail presente dans cette these aborde le besoin de circuits MMIC en bande W a haute puissance pour permettre les communications, le radar et la detection aux ondes millimetriques, ou l'allocation du spectre est encore en croissance et en evolution. Ce travail est finance par le programme de maturation du nitrure de gallium (GaN) aux ondes millimetriques de la DARPA, visant a mettre a l'echelle les dispositifs et les modeles GaN pour une utilisation dans l'amplification et les circuits de signaux mixtes. Pour atteindre l'objectif du programme, des conceptions de circuits avant fondamentaux pour des fonctions telles que la translation de frequence, l'amplification de puissance (PA), l'amplification a faible bruit (LNA) et le controle sont realisees en utilisant des HEMT GaN-on-SiC de 40 nm. L'integration de ces differents composants de circuits MMIC est exploree pour determiner egalement l'exactitude des modeles dans une operation au niveau du systeme.
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