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Xia, Xinyi.

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Investigation of Ultra-Wide Bandgap Semiconductors and SICxNy Coatings for Advanced Dental Implant Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Investigation of Ultra-Wide Bandgap Semiconductors and SICxNy Coatings for Advanced Dental Implant Applications./
Author:	Xia, Xinyi.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
Description:	241 p.
Notes:	Source: Dissertations Abstracts International, Volume: 85-08, Section: B.
Contained By:	Dissertations Abstracts International85-08B.
Subject:	Chemical engineering. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30566858
ISBN:	9798381699913

Investigation of Ultra-Wide Bandgap Semiconductors and SICxNy Coatings for Advanced Dental Implant Applications.
Xia, Xinyi.

Investigation of Ultra-Wide Bandgap Semiconductors and SICxNy Coatings for Advanced Dental Implant Applications. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 241 p.

Source: Dissertations Abstracts International, Volume: 85-08, Section: B.

Thesis (Ph.D.)--University of Florida, 2023.

In this PhD thesis, the primary focus is on investigating the band alignment of various dielectric materials on ultra-wide bandgap semiconductors using X-ray Photoelectron Spectroscopy. The study delves into measuring band offsets of SiO2 and Al2O3 on α-(AlxGa1−x)2O3 alloys with compositions ranging from x = 0.26 to 0.74 and the type II band alignment of SiO2 and Al2O3 on ScAlN. Furthermore, the band alignment of sputtered NiO on GaN, β-Ga2O3, and α-Ga2O3 are examined. NiO/GaN interface exhibits a type II alignment. The effect of thermal annealing on the band alignment of NiO on β-Ga2O3, and α-Ga2O3 were also studied and the alignments of those two interfaces remained type II, staggered gap, for annealing temperatures up to 600°C.The thesis also investigates the potential benefits of integrating indium tin oxide (ITO) and gallium oxide for studying single event radiation upsets (SERUs) and simulating heavy ion single event effects (SEE). The thermal stability of n/n+ β-Ga2O3 epitaxial layer/substrate structures with sputtered ITO is assessed, revealing significant reactions at the ITO and Ga2O3 interface above 300°C. This integration offers a promising avenue for future electronic device development.An additional area of focus is the exploration of the impact of focused Ga+ ion energy and beam current milling induced damage on the sidewall of vertical Ga2O3 rectifiers. The study uncovers that beam current is the most significant factor for creating sidewall damage. Annealing at temperatures up to 400°C results in substantial recovery of I-V characteristics.The thesis proceeds to examine the implications of radiation on Ga2O3 and its relevance for both space and terrestrial applications. The primary defects produced by radiation are gallium monovacancies. Comparisons to SiC and GaN highlight Ga2O3's high vulnerability to single event effects at high Linear Energy Transfer.Next, the research introduces a study centered on the use of N+ ion implantation to enhance the breakdown voltage of vertical geometry β-Ga2O3 rectifiers. Optimized implanted edge termination structures are developed to maximize the breakdown voltage without increasing diode on-resistance.Another aspect of this thesis involves investigating the effects of downstream plasma exposure with O2, N2, or CF4 discharges on Si-doped Ga2O3 Schottky diode characteristics. The results indicate that downstream plasma exposed Ga2O3 during device processing has minimal impacts on diode ideality factors and reverse-bias voltage leakage currents.The thesis further delves into the analysis of field-plated vertical Ga2O3 rectifiers operated at high temperatures up to 600 K. At high reverse voltage, a trap-assisted space-charge-limited conduction (SCLC) mechanism was observed, with extracted trap energies consistent with levels in the gap.Lastly, the research explores the promising application of ternary silicon carbon nitride (SiCN) films deposited via PECVD for dental implant coatings. The chemical composition, optical, and tribological properties are analyzed, providing valuable insights into the properties and potential applications of SiCN films for the use in dental implants.

ISBN: 9798381699913Subjects--Topical Terms:

560457
Chemical engineering.
Subjects--Index Terms:

Dental implants

Investigation of Ultra-Wide Bandgap Semiconductors and SICxNy Coatings for Advanced Dental Implant Applications.
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520 $a In this PhD thesis, the primary focus is on investigating the band alignment of various dielectric materials on ultra-wide bandgap semiconductors using X-ray Photoelectron Spectroscopy. The study delves into measuring band offsets of SiO2 and Al2O3 on α-(AlxGa1−x)2O3 alloys with compositions ranging from x = 0.26 to 0.74 and the type II band alignment of SiO2 and Al2O3 on ScAlN. Furthermore, the band alignment of sputtered NiO on GaN, β-Ga2O3, and α-Ga2O3 are examined. NiO/GaN interface exhibits a type II alignment. The effect of thermal annealing on the band alignment of NiO on β-Ga2O3, and α-Ga2O3 were also studied and the alignments of those two interfaces remained type II, staggered gap, for annealing temperatures up to 600°C.The thesis also investigates the potential benefits of integrating indium tin oxide (ITO) and gallium oxide for studying single event radiation upsets (SERUs) and simulating heavy ion single event effects (SEE). The thermal stability of n/n+ β-Ga2O3 epitaxial layer/substrate structures with sputtered ITO is assessed, revealing significant reactions at the ITO and Ga2O3 interface above 300°C. This integration offers a promising avenue for future electronic device development.An additional area of focus is the exploration of the impact of focused Ga+ ion energy and beam current milling induced damage on the sidewall of vertical Ga2O3 rectifiers. The study uncovers that beam current is the most significant factor for creating sidewall damage. Annealing at temperatures up to 400°C results in substantial recovery of I-V characteristics.The thesis proceeds to examine the implications of radiation on Ga2O3 and its relevance for both space and terrestrial applications. The primary defects produced by radiation are gallium monovacancies. Comparisons to SiC and GaN highlight Ga2O3's high vulnerability to single event effects at high Linear Energy Transfer.Next, the research introduces a study centered on the use of N+ ion implantation to enhance the breakdown voltage of vertical geometry β-Ga2O3 rectifiers. Optimized implanted edge termination structures are developed to maximize the breakdown voltage without increasing diode on-resistance.Another aspect of this thesis involves investigating the effects of downstream plasma exposure with O2, N2, or CF4 discharges on Si-doped Ga2O3 Schottky diode characteristics. The results indicate that downstream plasma exposed Ga2O3 during device processing has minimal impacts on diode ideality factors and reverse-bias voltage leakage currents.The thesis further delves into the analysis of field-plated vertical Ga2O3 rectifiers operated at high temperatures up to 600 K. At high reverse voltage, a trap-assisted space-charge-limited conduction (SCLC) mechanism was observed, with extracted trap energies consistent with levels in the gap.Lastly, the research explores the promising application of ternary silicon carbon nitride (SiCN) films deposited via PECVD for dental implant coatings. The chemical composition, optical, and tribological properties are analyzed, providing valuable insights into the properties and potential applications of SiCN films for the use in dental implants.
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