東華大學圖書館 |

Language: English

Help

回圖書館首頁

手機版館藏查詢

Back to Search results for [ null ]

Switch To: Labeled | MARC Mode | ISBD

Hafnium Oxide Based Ferroelectric Ma...

Yu, Zhouchangwan.

Linked to FindBook

Google Book

Amazon

博客來

Hafnium Oxide Based Ferroelectric Materials for Memory Applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Hafnium Oxide Based Ferroelectric Materials for Memory Applications./
Author:	Yu, Zhouchangwan.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2022,
Description:	113 p.
Notes:	Source: Dissertations Abstracts International, Volume: 84-09, Section: A.
Contained By:	Dissertations Abstracts International84-09A.
Subject:	Crystal structure. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30292281
ISBN:	9798374427578

Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
Yu, Zhouchangwan.

Hafnium Oxide Based Ferroelectric Materials for Memory Applications. - Ann Arbor : ProQuest Dissertations & Theses, 2022 - 113 p.

Source: Dissertations Abstracts International, Volume: 84-09, Section: A.

Thesis (Ph.D.)--Stanford University, 2022.

Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (HfO2)-based materials has led the re-emergence of ferroelectric memories in advanced semiconductor technologies, with the potential to reshape the technology landscape and to enable novel computing architectures. Ferroelectric HfO2 is promising for non-volatile memories (NVM) due to its ability to scale down to ultra-thin films and very small device dimensions. However, challenges are still present for implementation of ferroelectric HfO2 in commercial products developed for embedded memories, including limited programming cycle endurance and compatibility with the back-end-of-line (BEOL) processing temperature.This dissertation presents innovations at the material and device levels to realize high endurance and low thermal budget ferroelectric memories, followed by advanced material characterizations to probe the mechanisms behind. First, I will demonstrate an experimental investigation of ferroelectricity in CeO2 doped Hf0.5Zr0.5O2 (HZO) thin films.1 I will present an analysis encompassing measurements of switchable polarization, cycling endurance, stress-induced leakage current (SILC) and photoelectric effects to provide a comprehensive understanding of CeO2 doping effects on the conduction mechanism and reliability of CeO2-doped HZO polarization switching.Second, I will report an investigation of the crystal structure of ferroelectric HZO films as a function of atomic layer deposition (ALD) temperature. Our results suggests that optimization of HZO thin film synthesis defined by the ALD deposition temperature not only produces films with the highest ferroelectric polarization, but can achieve this at the low thermal budgets necessary for incorporation of ferroelectric HZO in BEOL devices.

ISBN: 9798374427578Subjects--Topical Terms:

3561040
Crystal structure.

Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
LDR:03058nmm a2200409 4500 001 2400806
005 20240930130038.5
006 m o d
007 cr#unu||||||||
008 251215s2022 ||||||||||||||||| ||eng d
020 $a 9798374427578
035 $a (MiAaPQ)AAI30292281
035 $a (MiAaPQ)STANFORDhn662hh8247
035 $a AAI30292281
040 $a MiAaPQ $c MiAaPQ
100 1 $a Yu, Zhouchangwan. $3 3770866
245 1 0 $a Hafnium Oxide Based Ferroelectric Materials for Memory Applications.
260 1 $a Ann Arbor : $b ProQuest Dissertations & Theses, $c 2022
300 $a 113 p.
500 $a Source: Dissertations Abstracts International, Volume: 84-09, Section: A.
500 $a Advisor: McIntyre, Paul;Nishi, Yoshio;Wong, Hon-Sum Philip.
502 $a Thesis (Ph.D.)--Stanford University, 2022.
520 $a Innovations of memory technologies are essential for addressing the future needs of data processing and storage. The discovery of ferroelectricity in hafnia (HfO2)-based materials has led the re-emergence of ferroelectric memories in advanced semiconductor technologies, with the potential to reshape the technology landscape and to enable novel computing architectures. Ferroelectric HfO2 is promising for non-volatile memories (NVM) due to its ability to scale down to ultra-thin films and very small device dimensions. However, challenges are still present for implementation of ferroelectric HfO2 in commercial products developed for embedded memories, including limited programming cycle endurance and compatibility with the back-end-of-line (BEOL) processing temperature.This dissertation presents innovations at the material and device levels to realize high endurance and low thermal budget ferroelectric memories, followed by advanced material characterizations to probe the mechanisms behind. First, I will demonstrate an experimental investigation of ferroelectricity in CeO2 doped Hf0.5Zr0.5O2 (HZO) thin films.1 I will present an analysis encompassing measurements of switchable polarization, cycling endurance, stress-induced leakage current (SILC) and photoelectric effects to provide a comprehensive understanding of CeO2 doping effects on the conduction mechanism and reliability of CeO2-doped HZO polarization switching.Second, I will report an investigation of the crystal structure of ferroelectric HZO films as a function of atomic layer deposition (ALD) temperature. Our results suggests that optimization of HZO thin film synthesis defined by the ALD deposition temperature not only produces films with the highest ferroelectric polarization, but can achieve this at the low thermal budgets necessary for incorporation of ferroelectric HZO in BEOL devices.
590 $a School code: 0212.
650 4 $a Crystal structure. $3 3561040
650 4 $a Random access memory. $3 623617
650 4 $a Technological change. $3 3564100
650 4 $a Electric fields. $3 880423
650 4 $a Neural networks. $3 677449
650 4 $a Phase transitions. $3 3560387
650 4 $a Families & family life. $3 3422406
650 4 $a Crystallization. $3 608799
650 4 $a Metal oxides. $3 3681693
650 4 $a CMOS. $3 3681646
650 4 $a Transistors. $3 713271
650 4 $a Thin films. $3 626403
650 4 $a Ferroelectrics. $3 3681651
650 4 $a Computer science. $3 523869
650 4 $a Condensed matter physics. $3 3173567
650 4 $a Electrical engineering. $3 649834
650 4 $a Electromagnetics. $3 3173223
650 4 $a Engineering. $3 586835
650 4 $a Individual & family studies. $3 2122770
650 4 $a Materials science. $3 543314
650 4 $a Physics. $3 516296
690 $a 0800
690 $a 0984
690 $a 0611
690 $a 0544
690 $a 0607
690 $a 0537
690 $a 0628
690 $a 0794
690 $a 0605
710 2 $a Stanford University. $3 754827
773 0 $t Dissertations Abstracts International $g 84-09A.
790 $a 0212
791 $a Ph.D.
792 $a 2022
793 $a English
856 4 0 $u https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30292281