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Current-Induced Dynamics of Easy-Pla...

Zhang, Pengxiang.

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Current-Induced Dynamics of Easy-Plane Antiferromagnets.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Current-Induced Dynamics of Easy-Plane Antiferromagnets./
Author:	Zhang, Pengxiang.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2023,
Description:	216 p.
Notes:	Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
Contained By:	Dissertations Abstracts International85-02B.
Subject:	Crystal structure. -
Online resource:	https://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=30672339
ISBN:	9798380097444

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
Zhang, Pengxiang.

Current-Induced Dynamics of Easy-Plane Antiferromagnets. - Ann Arbor : ProQuest Dissertations & Theses, 2023 - 216 p.

Source: Dissertations Abstracts International, Volume: 85-02, Section: B.

Thesis (Ph.D.)--Massachusetts Institute of Technology, 2023.

Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.

ISBN: 9798380097444Subjects--Topical Terms:

3561040
Crystal structure.

Current-Induced Dynamics of Easy-Plane Antiferromagnets.
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245 1 0 $a Current-Induced Dynamics of Easy-Plane Antiferromagnets.
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300 $a 216 p.
500 $a Source: Dissertations Abstracts International, Volume: 85-02, Section: B.
500 $a Advisor: Liu, Luqiao.
502 $a Thesis (Ph.D.)--Massachusetts Institute of Technology, 2023.
520 $a Antiferromagnetic memory devices are expected to be very fast, stable, dense and energy-efficient, making them promising for the next generation non-volatile random-access memory. However, in antiferromagnets, it used to be challenging to accurately understand the current-induced dynamics, especially the spin-orbit-torque switching dynamics. To realize a practical antiferromagnetic memory device, we must overcome the challenge.In this PhD Thesis, I discussed about the systematic and quantitative study of a model material, collinear easy-plane antiferromagnetic insulator α-Fe2O3 covered by Pt, for non-spin-orbit-torque switching mechanisms, magnon spin transport, and finally, the long-anticipated damping-like-torque switching, and the method to quantitatively characterize the spin-orbit torques. And I also discussed about the study about the damping-like-torque switching of a non-collinear easy-plane antiferromagnetic metal Mn3Sn, and the handedness anomaly of the switching direction.These studies deepen the scientific understandings of spin-orbit torque dynamics in antiferromagnets, and pave the way to real-life applications of antiferromagnetic memory devices.
590 $a School code: 0753.
650 4 $a Crystal structure. $3 3561040
650 4 $a Electromagnetism. $3 522050
650 4 $a Temperature. $3 711968
650 4 $a Magnetic fields. $3 660770
650 4 $a Heavy metals. $3 552237
650 4 $a Microscopy. $3 540544
650 4 $a Anisotropy. $3 596747
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650 4 $a Electric currents. $3 868393
650 4 $a Energy consumption. $3 631630
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650 4 $a Condensed matter physics. $3 3173567
650 4 $a Electrical engineering. $3 649834
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710 2 $a Massachusetts Institute of Technology. $b Department of Electrical Engineering and Computer Science. $3 3764399
773 0 $t Dissertations Abstracts International $g 85-02B.
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793 $a English
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