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Advancing Photonic Communication and Sensing Through Novel 3D Silicon Photonic Devices.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Advancing Photonic Communication and Sensing Through Novel 3D Silicon Photonic Devices./
作者:	Tietz, Stephanie.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	170 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-09, Section: B.
Contained By:	Dissertations Abstracts International83-09B.
標題:	Energy. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=29003840
ISBN:	9798209784036

Advancing Photonic Communication and Sensing Through Novel 3D Silicon Photonic Devices.
Tietz, Stephanie.

Advancing Photonic Communication and Sensing Through Novel 3D Silicon Photonic Devices. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 170 p.

Source: Dissertations Abstracts International, Volume: 83-09, Section: B.

Thesis (Ph.D.)--Stanford University, 2021.

This item must not be sold to any third party vendors.

From consumer products to specialized technology, it seems like everybody wants devices that are more powerful and yet smaller at the same time. Reliance on metallic devices and components serves to bottleneck any progress towards achieving both goals. One solution is to incorporate photonic technology and specifically photonic crystals (PhCs), taking advantage of the speed, efficiency, and lossless nature of photons. PhCs, specifically three-dimensional (3D) PhCs, offer a promise of complete control over light inside a device. But a big obstacle to integrating 3D PhCs into current processing and architecture is fabrication. Fabricated 3D PhCs (prior to this author's work in 2019) are not developed in a way that is considered silicon-compatible (Si-compatible) - using methodology that would fit seamlessly into already-established silicon processing methods needed for other components on the chip. Before widespread integration and subsequent benefits of photonics can be realized, a highly-customizable Si-compatible method for developing 3D photonic devices needs to be introduced.This dissertation explores the world of PhCs, specifically offering novel fabrication methods and analysis of 3D silicon PhC devices. Both pure bulk 3D PhC structures and 3D PhC defect devices are examined, first using theory and literature to provide a solid foundation and then building upon that foundation with new and innovative designs. The first truly Si-compatible fabrication of a 3D photonic crystal is explored, yielding a wide omnidirectional and complete band gap where light with frequencies within that region are forbidden to propagate in the device. Then by introducing intentional defects into the device and still maintaining Si-compatible methodology, this thesis provides an avenue for a breadth of research applications to use 3D PhC defect devices. While bulk PhC structures serve as reflectors, these defect devices are able to trap and guide light by introducing localized states where light within the band gap can exist, but only inside the defect space.One way to avoid horizontal space limitations for chips is to start developing vertically, using 3D integrated circuit technology. Given the importance such chip structures will likely have in the future, three-directional travel across a device is an essential point of research. Using the bulk 3D PhC design as the base structure, Si-compatible methods for creating waveguides in all three directions are introduced and the resulting structures are analyzed using COMSOL's Finite Element Method analysis. All three waveguide designs prove to have guided modes within the bulk PhC's band gap which would allow propagation of light from any one point on a device to another with (theoretically) no loss.3D PhC cavities are structures that can confine light to one single point defect on a device, which is a useful feature in applications such as sensing, lasing, and quantum dots. Two designs for 3D PhC cavities are examined in this thesis including a sidecoupled cavity that achieves a quality factor (Q-factor) of approximately 5,500 when surrounded by only two periods of bulk PhC lattice. Another 3D PhC cavity with an intersecting waveguide design performs even better, earning a Q-factor of about 56,000 even though the defect spaces - including both "waveguides" - are only surrounded by two periods of the perfect crystal lattice. Both Q-factors are expected to approach infinity as more periods of the bulk PhC lattice are added as a buffer around the defect due to 3D photonic band gap (PBG) confinement. PBG confinement is theoretically lossless, which is one of the great benefits of working with 3D PhC defect devices and one huge advantage that researchers can now explore further with the help of the Si-compatible processing methods introduced in this thesis.

ISBN: 9798209784036Subjects--Topical Terms:

876794
Energy.

Advancing Photonic Communication and Sensing Through Novel 3D Silicon Photonic Devices.
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