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Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects./
Author:	Hillier, James Arthur.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
Description:	220 p.
Notes:	Source: Dissertations Abstracts International, Volume: 83-07, Section: B.
Contained By:	Dissertations Abstracts International83-07B.
Subject:	Metals. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28942891
ISBN:	9798762164658

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.
Hillier, James Arthur.

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 220 p.

Source: Dissertations Abstracts International, Volume: 83-07, Section: B.

Thesis (Ph.D.)--Nottingham Trent University (United Kingdom), 2021.

This item must not be sold to any third party vendors.

The ongoing development of nanofabrication capabilities ever increases our ability to exploit the light-matter interactions occurring on the nanoscale, promising radical breakthroughs in many technological sectors. This research field, namely plasmonics, faces a major roadblock in respect to realistic applications. Specifically, to translate the potential of plasmonics into practical optical devices, the right set of materials are required; materials that can overcome the loss issue and expand the operational window towards the infrared and (IR) near-IR (NIR) spectral ranges. Transparent conductive oxides (TCOs) are appealing alternatives due to their transparency, refractory character, and maturity in electronic devices. Importantly, their non-stoichiometric character allows for the modulation of their optoelectronic properties through the manipulation of their defects. This research developed the knowledge of the optoelectronic properties of TCOs, via spectroscopic ellipsometry (SE) while examining high-throughput methods to tune their transport properties towards the requirements of IR plasmonics. Specifically, this research investigated, for the first time, the utility of reactive laser annealing (ReLA) to probe the crystal structure and donor state variations of sputtered tin-doped indium oxide (ITO) thin films. The demonstration of ReLA comprised an investigation of the role of the laser processing parameters (e.g., laser fluence, number of pulses and ambient composition) with an extensive characterisation methodology comprising: four-point probe, Hall Effect, X-ray diffractometry, energy-dispersive X-ray spectroscopy and X-ray photon spectroscopy. In this way, ReLA is established as a novel and versatile tool to tailor the properties of TCO films towards the requirements of potential plasmonic applications. Furthermore, SE in the wide spectral range between 0.034−6.5 eV was employed to get insights on the properties of seed TCO films and the laser-induced modifications, revealing how and why TCOs present challenges both for further elucidating the still not fully known mechanisms that govern their optoelectronic behaviour and for their integration into far-IR plasmonic devices.

ISBN: 9798762164658Subjects--Topical Terms:

601053
Metals.

Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.
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245 1 0 $a Photo-Engineered Optoelectronic Properties of Transparent Conductive Oxides via Reactive Laser Annealing (ReLa): The Consequence of Defects.
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500 $a Source: Dissertations Abstracts International, Volume: 83-07, Section: B.
500 $a Advisor: Kalfagiannis, Nikolaos.
502 $a Thesis (Ph.D.)--Nottingham Trent University (United Kingdom), 2021.
506 $a This item must not be sold to any third party vendors.
520 $a The ongoing development of nanofabrication capabilities ever increases our ability to exploit the light-matter interactions occurring on the nanoscale, promising radical breakthroughs in many technological sectors. This research field, namely plasmonics, faces a major roadblock in respect to realistic applications. Specifically, to translate the potential of plasmonics into practical optical devices, the right set of materials are required; materials that can overcome the loss issue and expand the operational window towards the infrared and (IR) near-IR (NIR) spectral ranges. Transparent conductive oxides (TCOs) are appealing alternatives due to their transparency, refractory character, and maturity in electronic devices. Importantly, their non-stoichiometric character allows for the modulation of their optoelectronic properties through the manipulation of their defects. This research developed the knowledge of the optoelectronic properties of TCOs, via spectroscopic ellipsometry (SE) while examining high-throughput methods to tune their transport properties towards the requirements of IR plasmonics. Specifically, this research investigated, for the first time, the utility of reactive laser annealing (ReLA) to probe the crystal structure and donor state variations of sputtered tin-doped indium oxide (ITO) thin films. The demonstration of ReLA comprised an investigation of the role of the laser processing parameters (e.g., laser fluence, number of pulses and ambient composition) with an extensive characterisation methodology comprising: four-point probe, Hall Effect, X-ray diffractometry, energy-dispersive X-ray spectroscopy and X-ray photon spectroscopy. In this way, ReLA is established as a novel and versatile tool to tailor the properties of TCO films towards the requirements of potential plasmonic applications. Furthermore, SE in the wide spectral range between 0.034−6.5 eV was employed to get insights on the properties of seed TCO films and the laser-induced modifications, revealing how and why TCOs present challenges both for further elucidating the still not fully known mechanisms that govern their optoelectronic behaviour and for their integration into far-IR plasmonic devices.
590 $a School code: 8745.
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650 4 $a Materials research. $3 3686999
650 4 $a Magnetic fields. $3 660770
650 4 $a CMOS. $3 3681646
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650 4 $a Lasers. $3 535503
650 4 $a Electric fields. $3 880423
650 4 $a Microscopy. $3 540544
650 4 $a Indium. $3 558247
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