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Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform./
作者:	Xu, Luhua.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2020,
面頁冊數:	157 p.
附註:	Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
Contained By:	Dissertations Abstracts International82-10B.
標題:	Silicon. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28383806
ISBN:	9798708708601

Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform.
Xu, Luhua.

Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform. - Ann Arbor : ProQuest Dissertations & Theses, 2020 - 157 p.

Source: Dissertations Abstracts International, Volume: 82-10, Section: B.

Thesis (Ph.D.)--McGill University (Canada), 2020.

This item must not be sold to any third party vendors.

The ever-increasing growth of global internet traffic has stimulated unprecedented demand of optical interconnect. Silicon photonics is a photonic technology that is based on the silicon-on-insulator (SOI) material platform. Taking advantage of the compatibility with the mature complementary metal-oxide-semiconductor (CMOS) fabrication process, silicon photonics is a promising solution for fabricating high-yield and cost-effective photonic integrated circuits (PICs), the core components of optical interconnect. A variety of photonic devices, which are the basic building blocks of the PICs, have been demonstrated for the SOI platform. These devices include optical couplers, polarization beam splitters (PBSs), wavelength demultiplexers, electro-optical modulators, and photodetectors.In recent years, the subwavelength grating (SWG) and the photonic crystal (PC) structures have attracted growing research interest in the silicon photonics community, due to their potential to further improve the performance and shrink the footprint of existing photonic devices. In the first part of this thesis, we report photonic devices with SWG structure for the SOI platform. Three different devices are designed and experimentally demonstrated. First, we report a 2x2 adiabatic 3-dB coupler, where the SWG slot is introduced to enable compact design footprint and high-performance operation. The designed coupler achieves measured power splitting ratios better than 3 ± 0.27 dB over a 100 nm bandwidth covering the C-band. Then, using the adiabatic coupler with SWG slot, an ultra-broadband and compact two-mode multiplexer is reported, where the measured crosstalk is lower than -18.8 dB over a 100 nm bandwidth covering the O-band and a 130 nm bandwidth covering the C-band and the L-band. Finally, by engineering the birefringence of an SWG multimode interference (MMI) coupler, a broadband and compact polarization beam splitter (PBS) is reported, where the measured extinction ratios (ERs) are higher than 11.7 dB for both polarizations over a 84 nm bandwidth covering the C-band.In the second part of this thesis, we report photonic devices with PC structure for the SOI platform. Two different devices are designed and experimentally demonstrated. Using the polarization-dependent properties of the PC, we report a compact and broadband PBS based on MMI coupler with internal PC, where the measured ERs are higher than 20 dB for both polarizations over a 77 nm bandwidth covering the C-band. Using the wavelength-dependent properties of the PC, we report a broadband 1310/1550 nm wavelength demultiplexer based on MMI coupler with tapered internal PC, where the measured ERs are higher than 15 dB over a 74 nm bandwidth at the O-band and a 103 nm bandwidth covering the C-band and the L-band.

ISBN: 9798708708601Subjects--Topical Terms:

669429
Silicon.
Subjects--Index Terms:

Photonic devices

Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform.
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245 1 0 $a Photonic Devices with Subwavelength Grating and Photonic Crystal Structures for Silicon-on-Insulator Platform.
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500 $a Source: Dissertations Abstracts International, Volume: 82-10, Section: B.
500 $a Advisor: Plant, David V.
502 $a Thesis (Ph.D.)--McGill University (Canada), 2020.
506 $a This item must not be sold to any third party vendors.
520 $a The ever-increasing growth of global internet traffic has stimulated unprecedented demand of optical interconnect. Silicon photonics is a photonic technology that is based on the silicon-on-insulator (SOI) material platform. Taking advantage of the compatibility with the mature complementary metal-oxide-semiconductor (CMOS) fabrication process, silicon photonics is a promising solution for fabricating high-yield and cost-effective photonic integrated circuits (PICs), the core components of optical interconnect. A variety of photonic devices, which are the basic building blocks of the PICs, have been demonstrated for the SOI platform. These devices include optical couplers, polarization beam splitters (PBSs), wavelength demultiplexers, electro-optical modulators, and photodetectors.In recent years, the subwavelength grating (SWG) and the photonic crystal (PC) structures have attracted growing research interest in the silicon photonics community, due to their potential to further improve the performance and shrink the footprint of existing photonic devices. In the first part of this thesis, we report photonic devices with SWG structure for the SOI platform. Three different devices are designed and experimentally demonstrated. First, we report a 2x2 adiabatic 3-dB coupler, where the SWG slot is introduced to enable compact design footprint and high-performance operation. The designed coupler achieves measured power splitting ratios better than 3 ± 0.27 dB over a 100 nm bandwidth covering the C-band. Then, using the adiabatic coupler with SWG slot, an ultra-broadband and compact two-mode multiplexer is reported, where the measured crosstalk is lower than -18.8 dB over a 100 nm bandwidth covering the O-band and a 130 nm bandwidth covering the C-band and the L-band. Finally, by engineering the birefringence of an SWG multimode interference (MMI) coupler, a broadband and compact polarization beam splitter (PBS) is reported, where the measured extinction ratios (ERs) are higher than 11.7 dB for both polarizations over a 84 nm bandwidth covering the C-band.In the second part of this thesis, we report photonic devices with PC structure for the SOI platform. Two different devices are designed and experimentally demonstrated. Using the polarization-dependent properties of the PC, we report a compact and broadband PBS based on MMI coupler with internal PC, where the measured ERs are higher than 20 dB for both polarizations over a 77 nm bandwidth covering the C-band. Using the wavelength-dependent properties of the PC, we report a broadband 1310/1550 nm wavelength demultiplexer based on MMI coupler with tapered internal PC, where the measured ERs are higher than 15 dB over a 74 nm bandwidth at the O-band and a 103 nm bandwidth covering the C-band and the L-band.
520 $a La croissance continuelle du trafic internet mondial a stimule une croissance sans precedents de la demande d'interconnections optiques. La photonique sur silicium est une technologie de photonique qui est bas/e sur la plateforme de silicium-sur-isolateur (SOI). En prenant avantage de sa compatibilite avec le processus mature de fabrication complementaire metal-oxyde-semiconducteur (CMOS), la photonique sur silicium est une solution prometteuse pour la fabrication a rentable et grand rendement de circuits integres de photonique (PICs), le composant central des interconnections optiques. Une variete de dispositifs photoniques, constituants les blocs de construction des PICs, ont ete demontres sur la plateforme SOI. Ces dispositifs incluent des coupleurs optiques, les separateurs par polarisation de faisceaux, demultiplexeurs par longueur d'onde, modulateurs electro-optiques et photodetecteurs.Dans les dernieres annees, les reseaux sub-longueur d'onde (SWG) et structures de cristaux photoniques (PC) ont attires un interet croissant de la communaute de recherche, grace a leur potentiel d'ameliorer les performances ainsi que de reduire l'empreinte des dispositifs photoniques existants. Dans la premiere partie de cette these, nous rapportons des dispositifs photoniques a structure SWG pour la plateforme SOI. Trois differents dispositifs sont concus et demontres experimentalement. Premierement, nous rapportons un coupleur adiabatique 2x2 de 3-dB, ou le SWG est introduit pour permettre une conception compacte et une operation a haute performance. Le coupleur concu atteint un ratio de separation de puissance mesure meilleur que 3 ± 0.27 dB sur une largeur de bande de plus de 100 nm qui couvre la bande-C. Ensuite, en utilisant le coupleur adiabatique avec section SWG, un multiplexeur double mode ultra-large-bande et ultra-compact est rapporte, ou le bruit-croise mesure est moins de -18.8 dB sur une largeur de bande de 100 nm couvrant la bande-O et 130 nm couvrant la bande-C et bande-L. Finalement, faisant l'ingenierie de la birefringence d'un coupleur a SWG multimode interferentiel (MMI), un rotateur et separateur de polarisation de faisceau (PBS) est rapporte, ou le ratio d'extinction (ER) mesure est plus grand que 11.7 dB pour les deux polarisations sur une largeur de bande de 84 nm couvrant la bande-C.Dans la deuxieme partie de cette these, nous rapportons un dispositif photonique avec une structure PC pour la plateforme SOI. Deux differents dispositifs sont concus et demontres experimentalement. En utilisant les proprietes dependantes de la polarisation du PC, nous rapportons un PBS compact et e large bande, base sur un coupleur MMI avec PC interne, ou les ER mesures sont plus de 20 dB pour les deux polarisations sur une largeur de bande de 77 nm couvrant la bande-C. En utilisant la dependance en longueur d'ondes des proprietes du PC, nous rapportons un demultiplexeur de longueur d'onde a large bande 1310/1550 nm base sur un coupleur MMI avec PC interne effile, ou les ER mesures sont plus de 15 dB sur une largeur de bande de 74 nm dans la bande-O et de 103 nm couvrant la bande-C et bande-L.
590 $a School code: 0781.
650 4 $a Silicon. $3 669429
650 4 $a Photonics. $3 526247
650 4 $a Nanowires. $3 576100
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