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A near Zero Field Magnetoresistance Study of Spin-Dependent Currents in Semiconductor and Dielectric Materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	A near Zero Field Magnetoresistance Study of Spin-Dependent Currents in Semiconductor and Dielectric Materials./
作者:	McKay, Colin G.
出版者:	Ann Arbor : ProQuest Dissertations & Theses, : 2021,
面頁冊數:	156 p.
附註:	Source: Dissertations Abstracts International, Volume: 83-06, Section: B.
Contained By:	Dissertations Abstracts International83-06B.
標題:	Applied physics. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=28929365
ISBN:	9798494498298

A near Zero Field Magnetoresistance Study of Spin-Dependent Currents in Semiconductor and Dielectric Materials.
McKay, Colin G.

A near Zero Field Magnetoresistance Study of Spin-Dependent Currents in Semiconductor and Dielectric Materials. - Ann Arbor : ProQuest Dissertations & Theses, 2021 - 156 p.

Source: Dissertations Abstracts International, Volume: 83-06, Section: B.

Thesis (Ph.D.)--The Pennsylvania State University, 2021.

Near zero field magnetoresistance (NZFMR) is a new spin-based spectroscopic technique that offers some of the analytical power of electrically detected magnetic resonance (EDMR) when studying performance limiting defects in semiconductors and dielectrics. NZFMR measurements are far simpler and considerably less complex than other spin-based spectroscopic techniques. NZFMR is based upon the fact that spin-based conductivity of materials can change as an externally applied magnetic field is swept through zero. This results in a spectrum somewhat similar to those observed in electron paramagnetic resonance measurements (EPR). Attempts to interpret this phenomenon are currently being developed. This work focuses on EDMR and NZFMR measurements on three model systems, amorphous hydrogenated carbon (a- C:H), amorphous diamond-like carbon (DLC), and amorphous hydrogenated silicon carbide (a- SiC:H). A major focus of this work is the study of stress induced leakage current (SILC) and time dependent dielectric breakdown (TDDB). These measurements were then used to inform the development of the computational models in order to determine what physical information can be extracted from NZFMR spectra and to provide insight into TDDB. The current in the amorphous thin film samples is primarily due to variable range hopping (VRH) or trap assisted tunneling (TAT). The amorphous carbon samples (both a-C:H and DLC) exhibited unstable electrical characteristics under constant biasing conditions over time. This suggests that there are physical changes occurring in these samples over time. The a-C:H samples exhibit a behavior indicative of TDDB with a decrease in current over time along with a reduction in EDMR and NZFMR signals and trapped space charge. The DLC shows an increase in current due to stress along with a change in the shape of the EDMR and NZFMR signals, likely indicating the introduction of new defects. Some low field EDMR and NZFMR results are also reported in SiGe alloy p-MOSFETs. A new NZFMR spectrometer was built into a wafer probing station to allow for non-destructive measurements to be made on larger samples, rather than dicing wafers and mounting samples to custom made holders, allowing for a higher throughput of EDMR and NZFMR measurements.

ISBN: 9798494498298Subjects--Topical Terms:

3343996
Applied physics.
Subjects--Index Terms:

Near zero field magnetoresistance

A near Zero Field Magnetoresistance Study of Spin-Dependent Currents in Semiconductor and Dielectric Materials.
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