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AlGaN/GaN MOSHFETs using ALD Dielect...

Azam, Faisal.

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AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability.

Record Type:	Electronic resources : Monograph/item
Title/Author:	AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability./
Author:	Azam, Faisal.
Published:	Ann Arbor : ProQuest Dissertations & Theses, : 2018,
Description:	131 p.
Notes:	Source: Dissertation Abstracts International, Volume: 79-06(E), Section: B.
Contained By:	Dissertation Abstracts International79-06B(E).
Subject:	Electrical engineering. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=11017863

AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability.
Azam, Faisal.

AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability. - Ann Arbor : ProQuest Dissertations & Theses, 2018 - 131 p.

Source: Dissertation Abstracts International, Volume: 79-06(E), Section: B.

Thesis (Ph.D.)--North Carolina State University, 2018.

Gallium Nitride is the most promising semiconductor material for both microwave and power switching applications. Due to its excellent carrier mobility, high current density, high breakdown voltage, and high temperature operation AlGaN/GaN devices are extremely attractive for the next generation of power devices in the 100--650 V range [49]. The increasing demand for more efficient transistors, higher output power density, higher input impedance, and higher blocking voltage potential has led to the research and development of GaN over last two decades. Since the 1st demonstration of a GaN high electron mobility transistor (HEMT) in 1993 [8], GaN-based RF power devices have made substantial progresses including steadily improved growth techniques, material qualities, enhanced processing technologies, and more optimum device designs. More recently, advancement of insulating gate and field-management technologies based on the GaN HEMT structure has resulted in 600 V and above power switching transistors. The trend of the GaN-based device is towards higher output power density, higher Power-Added-Efficiency (PAE), higher operation frequencies and improved reliability. In order to achieve these requirements, novel device designs and processing technologies are being developed. The greatest impediment for the industry-wide adoption of GaN technology has been, and remains, achieving a high level of reliability and stability concurrently with high performance operation. The focus of my research has been to improve upon these weaknesses and provide a forward momentum for the technology. The devices we worked on were normally-on (depletion-mode), lateral AlGaN/GaN MOSHFET at 600 V rating. This class of device is an important target for solar inverters, motor drives, electric-vehicle charging, for use in solid state transformer (SST), distributed energy storage devices (DESD), telecom DC-to-DC conversion, and military applications. We approached from various technological solutions standpoint to address some of the core challenges. In particular, we investigated ALD dielectrics and their impact on the gate and access region of the transistor. The ALD chemistry and effect of oxidants were studied in great detail. We explored effect of annealing ambient on improving traps. Device design considerations were also taken into account and optimized such as, dielectric thickness, gate-to-drain separation, etc. We stressed the devices by making them undergo temperature and bias acceleration tests and followed a comprehensive characterization suite to evaluate the health of the device. Our efforts materialized in seeing improvements in several of the performance and reliability metrics. With the enhancements proven in this work and directions suggested, GaN technology not only provides more efficacy and solid potential for the near-term applications but also paves the way for energy internet in the long run.Subjects--Topical Terms:

649834
Electrical engineering.

AlGaN/GaN MOSHFETs using ALD Dielectrics: A Study in Performance and Reliability.
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502 $a Thesis (Ph.D.)--North Carolina State University, 2018.
520 $a Gallium Nitride is the most promising semiconductor material for both microwave and power switching applications. Due to its excellent carrier mobility, high current density, high breakdown voltage, and high temperature operation AlGaN/GaN devices are extremely attractive for the next generation of power devices in the 100--650 V range [49]. The increasing demand for more efficient transistors, higher output power density, higher input impedance, and higher blocking voltage potential has led to the research and development of GaN over last two decades. Since the 1st demonstration of a GaN high electron mobility transistor (HEMT) in 1993 [8], GaN-based RF power devices have made substantial progresses including steadily improved growth techniques, material qualities, enhanced processing technologies, and more optimum device designs. More recently, advancement of insulating gate and field-management technologies based on the GaN HEMT structure has resulted in 600 V and above power switching transistors. The trend of the GaN-based device is towards higher output power density, higher Power-Added-Efficiency (PAE), higher operation frequencies and improved reliability. In order to achieve these requirements, novel device designs and processing technologies are being developed. The greatest impediment for the industry-wide adoption of GaN technology has been, and remains, achieving a high level of reliability and stability concurrently with high performance operation. The focus of my research has been to improve upon these weaknesses and provide a forward momentum for the technology. The devices we worked on were normally-on (depletion-mode), lateral AlGaN/GaN MOSHFET at 600 V rating. This class of device is an important target for solar inverters, motor drives, electric-vehicle charging, for use in solid state transformer (SST), distributed energy storage devices (DESD), telecom DC-to-DC conversion, and military applications. We approached from various technological solutions standpoint to address some of the core challenges. In particular, we investigated ALD dielectrics and their impact on the gate and access region of the transistor. The ALD chemistry and effect of oxidants were studied in great detail. We explored effect of annealing ambient on improving traps. Device design considerations were also taken into account and optimized such as, dielectric thickness, gate-to-drain separation, etc. We stressed the devices by making them undergo temperature and bias acceleration tests and followed a comprehensive characterization suite to evaluate the health of the device. Our efforts materialized in seeing improvements in several of the performance and reliability metrics. With the enhancements proven in this work and directions suggested, GaN technology not only provides more efficacy and solid potential for the near-term applications but also paves the way for energy internet in the long run.
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