東華大學圖書館 |

語系: 繁體中文

說明(常見問題)

回圖書館首頁

手機版館藏查詢

登入

回首頁 到查詢結果 [ null ]

切換: 標籤 | MARC模式 | ISBD

Determination of the interfacial ele...

Schroeder, Paul Gordon.

FindBook

Google Book

Amazon

博客來

Determination of the interfacial electronic structure and morphology of organic semiconductor materials.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Determination of the interfacial electronic structure and morphology of organic semiconductor materials./
作者:	Schroeder, Paul Gordon.
面頁冊數:	250 p.
附註:	Source: Dissertation Abstracts International, Volume: 63-05, Section: B, page: 2402.
Contained By:	Dissertation Abstracts International63-05B.
標題:	Chemistry, Physical. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3053450
ISBN:	0493686649

Determination of the interfacial electronic structure and morphology of organic semiconductor materials.
Schroeder, Paul Gordon.

Determination of the interfacial electronic structure and morphology of organic semiconductor materials. - 250 p.

Source: Dissertation Abstracts International, Volume: 63-05, Section: B, page: 2402.

Thesis (Ph.D.)--Colorado State University, 2002.

Thin films of p-quaterphenyl, p-sexiphenyl, coronene, and pentacene were each deposited sequentially in multiple steps onto different substrates including highly oriented pyrolytic graphite (HOPG), SnS2, and Au(111). The energy level offsets at the interfaces between each organic semiconductor film and the respective substrate were subsequently measured using a combination of X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) in situ after each growth step. The organic materials used have significantly delocalized molecular orbitals, and were chosen for their potential applications in organic semiconductor devices and that they allowed for more thorough analysis of the interface. HOPG and SnS2 are layered materials that have nearly atomically flat van der Waals surfaces that could be cleaved in vacuum allowing for fundamental investigations of interfacial dipoles and the existence of band bending effects at the interfaces of organic materials. The gold substrate allowed for more applied studies into the contact interfaces used for organic thin film transistors.

ISBN: 0493686649Subjects--Topical Terms:

560527
Chemistry, Physical.

Determination of the interfacial electronic structure and morphology of organic semiconductor materials.
LDR:02976nmm 2200301 4500 001 1851119
005 20051216105414.5
008 130614s2002 eng d
020 $a 0493686649
035 $a (UnM)AAI3053450
035 $a AAI3053450
040 $a UnM $c UnM
100 1 $a Schroeder, Paul Gordon. $3 1939018
245 1 0 $a Determination of the interfacial electronic structure and morphology of organic semiconductor materials.
300 $a 250 p.
500 $a Source: Dissertation Abstracts International, Volume: 63-05, Section: B, page: 2402.
500 $a Adviser: Bruce A. Parkinson.
502 $a Thesis (Ph.D.)--Colorado State University, 2002.
520 $a Thin films of p-quaterphenyl, p-sexiphenyl, coronene, and pentacene were each deposited sequentially in multiple steps onto different substrates including highly oriented pyrolytic graphite (HOPG), SnS2, and Au(111). The energy level offsets at the interfaces between each organic semiconductor film and the respective substrate were subsequently measured using a combination of X-ray and ultraviolet photoelectron spectroscopy (XPS, UPS) in situ after each growth step. The organic materials used have significantly delocalized molecular orbitals, and were chosen for their potential applications in organic semiconductor devices and that they allowed for more thorough analysis of the interface. HOPG and SnS2 are layered materials that have nearly atomically flat van der Waals surfaces that could be cleaved in vacuum allowing for fundamental investigations of interfacial dipoles and the existence of band bending effects at the interfaces of organic materials. The gold substrate allowed for more applied studies into the contact interfaces used for organic thin film transistors.
520 $a The combined methods of UPS and XPS were used to more precisely determine the orbital offsets at the organic interfaces by separating out band bending, or final state screening related shifts, from the total work function measured with UPS. In addition, a method using low intensity XPS work function measurements was successfully developed to separate out sample charging artifacts from the true shifts.
520 $a Several of these systems, particularly those consisting of pentacene, were also characterized for the surface adsorption and film morphology using scanning tunneling microscopy (STM), atomic force microscopy (AFM), and temperature programmed desorption (TPD). The STM images revealed ordering of pentacene in several distinct unit cells with respect to the Au(111) surface. Different growth patterns of pentacene deposited on Au(111) and SnS2 were observed based on the analysis of the ultra-violet photoelectron spectra and AFM.
590 $a School code: 0053.
650 4 $a Chemistry, Physical. $3 560527
650 4 $a Chemistry, Analytical. $3 586156
690 $a 0494
690 $a 0486
710 2 0 $a Colorado State University. $3 675646
773 0 $t Dissertation Abstracts International $g 63-05B.
790 1 0 $a Parkinson, Bruce A., $e advisor
790 $a 0053
791 $a Ph.D.
792 $a 2002
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3053450