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Synthesis of large-grained polycryst...

Mason, Maribeth Swiatek.

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Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications./
Author:	Mason, Maribeth Swiatek.
Description:	77 p.
Notes:	Source: Dissertation Abstracts International, Volume: 65-03, Section: B, page: 1362.
Contained By:	Dissertation Abstracts International65-03B.
Subject:	Physics, General. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3125066
ISBN:	0496723677

Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications.
Mason, Maribeth Swiatek.

Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications. - 77 p.

Source: Dissertation Abstracts International, Volume: 65-03, Section: B, page: 1362.

Thesis (Ph.D.)--California Institute of Technology, 2004.

In this study, we investigate the fabrication of large-grained polycrystalline silicon by hot-wire chemical vapor deposition (HWCVD) and its suitability for thin-film photovoltaic applications, We have devised two strategies for the fast, low-temperature growth of thin polycrystalline silicon films on glass substrates, The first is the direct growth of polycrystalline silicon on SiO2 by HWCVD. We use atomic force microscopy (AFM) to characterize fully continuous polycrystalline silicon films grown by HWCVD on SiO 2, as well as the nucleation density of silicon islands formed in the early stages of HWCVD growth, as a function of temperature and hydrogen dilution (H2:SiH4). Our observations of the nucleation kinetics of Si on SiO2 can be explained by a rate-equation pair-binding model, from which we derive an estimate for the prefactor and activation energy for surface diffusion of Si on SiO2 during HWCVD growth and assess the viability of this method for the rapid growth of large-grained polycrystalline silicon on SiO2.

ISBN: 0496723677Subjects--Topical Terms:

1018488
Physics, General.

Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications.
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100 1 $a Mason, Maribeth Swiatek. $3 1935573
245 1 0 $a Synthesis of large-grained polycrystalline silicon by hot-wire chemical vapor deposition for thin film photovoltaic applications.
300 $a 77 p.
500 $a Source: Dissertation Abstracts International, Volume: 65-03, Section: B, page: 1362.
500 $a Adviser: Harry Atwater.
502 $a Thesis (Ph.D.)--California Institute of Technology, 2004.
520 $a In this study, we investigate the fabrication of large-grained polycrystalline silicon by hot-wire chemical vapor deposition (HWCVD) and its suitability for thin-film photovoltaic applications, We have devised two strategies for the fast, low-temperature growth of thin polycrystalline silicon films on glass substrates, The first is the direct growth of polycrystalline silicon on SiO2 by HWCVD. We use atomic force microscopy (AFM) to characterize fully continuous polycrystalline silicon films grown by HWCVD on SiO 2, as well as the nucleation density of silicon islands formed in the early stages of HWCVD growth, as a function of temperature and hydrogen dilution (H2:SiH4). Our observations of the nucleation kinetics of Si on SiO2 can be explained by a rate-equation pair-binding model, from which we derive an estimate for the prefactor and activation energy for surface diffusion of Si on SiO2 during HWCVD growth and assess the viability of this method for the rapid growth of large-grained polycrystalline silicon on SiO2.
520 $a The second strategy uses large-grained (&sim;100 mum) polycrystalline silicon layers fabricated by selective nucleation and solid-phase epitaxy (SNSPE) on SiO2, substrates as templates for epitaxial growth by HWCVD. Using reflection High-energy electron diffraction (RHEED) and transmission electron microscopy (TEM) we have derived a phase diagram for Si on Si(100) consisting of epitaxial, twinned epitaxial, mixed epitaxial/polycrystalline, and polycrystalline phases of growth on Si(100) in the 50 nm--2 mum thickness regime, Evidence is also presented for epitaxial growth on SNSPE templates, which use nickel nanoparticles as nucleation sites for the solid-phase crystallization of phosphorus-doped amorphous silicon on SiO2. Minority carrier lifetimes for films on Si(100), as measured by resonant-coupled photoconductive decay experiments, range from 5.7 to 14.8 mus while those for films on SNSPE templates range from 5.9 to 19.3 mus. Residual nickel present in the SNSPE templates does not significantly affect the lifetime of films grown on SNSPE templates, making the growth of epitaxial layers by HWCVD on SNSPE templates a possible strategy for the fabrication of thin-film photovoltaics.
590 $a School code: 0037.
650 4 $a Physics, General. $3 1018488
650 4 $a Engineering, Materials Science. $3 1017759
690 $a 0605
690 $a 0794
710 2 0 $a California Institute of Technology. $3 726902
773 0 $t Dissertation Abstracts International $g 65-03B.
790 1 0 $a Atwater, Harry, $e advisor
790 $a 0037
791 $a Ph.D.
792 $a 2004
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3125066