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Zhang, Jinping.

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Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon./
Author:	Zhang, Jinping.
Description:	141 p.
Notes:	Source: Masters Abstracts International, Volume: 37-02, page: 0676.
Contained By:	Masters Abstracts International37-02.
Subject:	Engineering, Materials Science. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1392280
ISBN:	0599075198

Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.
Zhang, Jinping.

Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon. - 141 p.

Source: Masters Abstracts International, Volume: 37-02, page: 0676.

Thesis (M.S.)--Michigan State University, 1998.

The goal of this research has been to investigate the intrinsic stress resulting from sputtering, extrinsic thermal stress resulting from the temperature change in NiTi on (100)Si, stress evolution behavior during isochronal and isothermal annealing of as-sputtered films, and the interaction between stress and phase transformations in crystallized films. The latter may eventually lead to application of NiTi films as actuator materials in microelectromechanical systems (MEMS). Near-equiatomic Ni-rich NiTi films were fabricated by planar d.c. magnetron sputtering using Ni-rich NiTi cathodes, and near-equiatomic Ti-rich NiTi films were fabricated using a composite cathode. Thin film stress measurements by the wafer-curvature method showed that compressive intrinsic stresses resulted from the deposition parameters used, and the magnitude of the intrinsic stress depended on the working gas density as well as the film thickness. Both isothermal and isochronal annealing experiments showed that the residual stresses were stable below the deposition temperature. When the annealing temperature exceeded the deposition temperature, stress was relaxed by a two-stage process for crystalline films, and by a one-stage process for amorphous films. For both near-equiatomic Ni-rich NiTi films on Si and near-equiatomic Ti-rich NiTi on

ISBN: 0599075198Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.
LDR:02609nmm 2200253 4500 001 1841383
005 20050908073023.5
008 130614s1998 eng d
020 $a 0599075198
035 $a (UnM)AAI1392280
035 $a AAI1392280
040 $a UnM $c UnM
100 1 $a Zhang, Jinping. $3 1929685
245 1 0 $a Stress evolution during isothermal and isochronal annealing of sputtered nickel-titanium thin films on (100)-silicon.
300 $a 141 p.
500 $a Source: Masters Abstracts International, Volume: 37-02, page: 0676.
502 $a Thesis (M.S.)--Michigan State University, 1998.
520 $a The goal of this research has been to investigate the intrinsic stress resulting from sputtering, extrinsic thermal stress resulting from the temperature change in NiTi on (100)Si, stress evolution behavior during isochronal and isothermal annealing of as-sputtered films, and the interaction between stress and phase transformations in crystallized films. The latter may eventually lead to application of NiTi films as actuator materials in microelectromechanical systems (MEMS). Near-equiatomic Ni-rich NiTi films were fabricated by planar d.c. magnetron sputtering using Ni-rich NiTi cathodes, and near-equiatomic Ti-rich NiTi films were fabricated using a composite cathode. Thin film stress measurements by the wafer-curvature method showed that compressive intrinsic stresses resulted from the deposition parameters used, and the magnitude of the intrinsic stress depended on the working gas density as well as the film thickness. Both isothermal and isochronal annealing experiments showed that the residual stresses were stable below the deposition temperature. When the annealing temperature exceeded the deposition temperature, stress was relaxed by a two-stage process for crystalline films, and by a one-stage process for amorphous films. For both near-equiatomic Ni-rich NiTi films on Si and near-equiatomic Ti-rich NiTi on $\ rm SiO\sb2/Si $, extrinsic thermal stresses as high as 700 MPa were obtained by cooling the sample from a nearly stress-free state at a high annealing temperature, but were relaxed to nearly zero by R-phase and martensitic transformations. The stress was recoverable by reverse transformations taking place during heating. The reversibility of stress relaxation may be exploited to produce cyclic displacements useful in microelectromechanical systems.
590 $a School code: 0128.
650 4 $a Engineering, Materials Science. $3 1017759
650 4 $a Applied Mechanics. $3 1018410
690 $a 0794
690 $a 0346
710 2 0 $a Michigan State University. $3 676168
773 0 $t Masters Abstracts International $g 37-02.
790 $a 0128
791 $a M.S.
792 $a 1998
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1392280