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Fabrication and device characterizat...

Gregory, John Walter.

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Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor./
Author:	Gregory, John Walter.
Description:	156 p.
Notes:	Source: Dissertation Abstracts International, Volume: 53-11, Section: B, page: 5888.
Contained By:	Dissertation Abstracts International53-11B.
Subject:	Engineering, Electronics and Electrical. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9307246

Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor.
Gregory, John Walter.

Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor. - 156 p.

Source: Dissertation Abstracts International, Volume: 53-11, Section: B, page: 5888.

Thesis (Ph.D.)--University of Colorado at Colorado Springs, 1992.

Barium magnesium tetrafluorine (BMTF) was deposited on p type silicon and silicon dioxide followed with the deposition of aluminum on BMTF to form capacitor test structures. The BMTF deposited was examined with Auger, X-ray Diffraction, and X-ray Photoemission Spectroscopy. The material analysis indicated the films were fluorine deficient and barium rich. The test structures were characterized for current versus voltage, using a quasi-static and a ramped signal method. A high frequency capacitance versus voltage measurement was used, in addition, to characterize the test structures. The results from the current measurements showed BMTF was conductive and exhibited a space-charge-limited current. The BMTF was incorporated into the gate structure of a field effect transistor (FET) to form a nondestructive read out (NDRO) device. The FET with BMTF on silicon dioxide performed well but the retention of the device was limited to 70 seconds. An alternate method to deposit BMTF with a Metal Organic Deposition technique was also investigated.Subjects--Topical Terms:

626636
Engineering, Electronics and Electrical.

Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor.
LDR:02001nmm 2200265 4500 001 1837085
005 20050404071505.5
008 130614s1992 eng d
035 $a (UnM)AAI9307246
035 $a AAI9307246
040 $a UnM $c UnM
100 1 $a Gregory, John Walter. $3 1925546
245 1 0 $a Fabrication and device characterization of the barium magnesium tetrafluorine/silicon dioxide ferroelectric field-effect transistor.
300 $a 156 p.
500 $a Source: Dissertation Abstracts International, Volume: 53-11, Section: B, page: 5888.
500 $a Director: Carlos A. Paz de Araujo.
502 $a Thesis (Ph.D.)--University of Colorado at Colorado Springs, 1992.
520 $a Barium magnesium tetrafluorine (BMTF) was deposited on p type silicon and silicon dioxide followed with the deposition of aluminum on BMTF to form capacitor test structures. The BMTF deposited was examined with Auger, X-ray Diffraction, and X-ray Photoemission Spectroscopy. The material analysis indicated the films were fluorine deficient and barium rich. The test structures were characterized for current versus voltage, using a quasi-static and a ramped signal method. A high frequency capacitance versus voltage measurement was used, in addition, to characterize the test structures. The results from the current measurements showed BMTF was conductive and exhibited a space-charge-limited current. The BMTF was incorporated into the gate structure of a field effect transistor (FET) to form a nondestructive read out (NDRO) device. The FET with BMTF on silicon dioxide performed well but the retention of the device was limited to 70 seconds. An alternate method to deposit BMTF with a Metal Organic Deposition technique was also investigated.
590 $a School code: 0892.
650 4 $a Engineering, Electronics and Electrical. $3 626636
650 4 $a Physics, Electricity and Magnetism. $3 1019535
690 $a 0544
690 $a 0607
710 2 0 $a University of Colorado at Colorado Springs. $3 1024084
773 0 $t Dissertation Abstracts International $g 53-11B.
790 1 0 $a de Araujo, Carlos A. Paz, $e advisor
790 $a 0892
791 $a Ph.D.
792 $a 1992
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=9307246