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A first-principles study on the enha...

Wang, Xiao.

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A first-principles study on the enhancement of beryllium doping in gallium nitride.

Record Type:	Electronic resources : Monograph/item
Title/Author:	A first-principles study on the enhancement of beryllium doping in gallium nitride./
Author:	Wang, Xiao.
Description:	82 p.
Notes:	Source: Masters Abstracts International, Volume: 44-01, page: 0375.
Contained By:	Masters Abstracts International44-01.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1428103
ISBN:	9780542227158

A first-principles study on the enhancement of beryllium doping in gallium nitride.
Wang, Xiao.

A first-principles study on the enhancement of beryllium doping in gallium nitride. - 82 p.

Source: Masters Abstracts International, Volume: 44-01, page: 0375.

Thesis (M.S.)--The University of Texas at Arlington, 2005.

The excellent physical and electrical properties of Gallium Nitride (GaN) have made it a good candidate in light-emitting diodes and UV detecting semiconductor materials. However, GaN's p-type doping has long been a difficulty. Although beryllium (Be) substitutials arise as shallow acceptors in GaN, the concentration of Be substitutials, and hence the population of holes, is not high enough. In the present work, formation energies of Be point defects and complex defects are calculated and compared by first-principles density functional theory (DFT) method. We find self-compensation is easily formed when Be substitutials and Be interstitials co-exist in GaN, which is responsible for the low solubility of Be p-type doping. We have examined the idea using oxygen as a co-doping element to overcome the self-compensation. The formation of oxygen involved complex in GaN has been studied energetically. The charge states have also been considered. The results are compared with the formation of Be-only complexes.

ISBN: 9780542227158Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

A first-principles study on the enhancement of beryllium doping in gallium nitride.
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100 1 $a Wang, Xiao. $3 1292882
245 1 2 $a A first-principles study on the enhancement of beryllium doping in gallium nitride.
300 $a 82 p.
500 $a Source: Masters Abstracts International, Volume: 44-01, page: 0375.
500 $a Supervisor: Qiming Zhang.
502 $a Thesis (M.S.)--The University of Texas at Arlington, 2005.
520 $a The excellent physical and electrical properties of Gallium Nitride (GaN) have made it a good candidate in light-emitting diodes and UV detecting semiconductor materials. However, GaN's p-type doping has long been a difficulty. Although beryllium (Be) substitutials arise as shallow acceptors in GaN, the concentration of Be substitutials, and hence the population of holes, is not high enough. In the present work, formation energies of Be point defects and complex defects are calculated and compared by first-principles density functional theory (DFT) method. We find self-compensation is easily formed when Be substitutials and Be interstitials co-exist in GaN, which is responsible for the low solubility of Be p-type doping. We have examined the idea using oxygen as a co-doping element to overcome the self-compensation. The formation of oxygen involved complex in GaN has been studied energetically. The charge states have also been considered. The results are compared with the formation of Be-only complexes.
590 $a School code: 2502.
650 4 $a Physics, Condensed Matter. $3 1018743
690 $a 0611
710 2 0 $a The University of Texas at Arlington. $3 1025869
773 0 $t Masters Abstracts International $g 44-01.
790 1 0 $a Zhang, Qiming, $e advisor
790 $a 2502
791 $a M.S.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=1428103