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Surface morphology of growing epitax...

Saxena, Ankur.

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Surface morphology of growing epitaxial layers: Simulations using kinetic Monte Carlo method.

紀錄類型:	書目-電子資源 : Monograph/item
正題名/作者:	Surface morphology of growing epitaxial layers: Simulations using kinetic Monte Carlo method./
作者:	Saxena, Ankur.
面頁冊數:	117 p.
附註:	Source: Masters Abstracts International, Volume: 44-02, page: 1018.
Contained By:	Masters Abstracts International44-02.
標題:	Engineering, Materials Science. -
電子資源:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=MR06135
ISBN:	0494061359

Surface morphology of growing epitaxial layers: Simulations using kinetic Monte Carlo method.
Saxena, Ankur.

Surface morphology of growing epitaxial layers: Simulations using kinetic Monte Carlo method. - 117 p.

Source: Masters Abstracts International, Volume: 44-02, page: 1018.

Thesis (M.Sc.)--University of Calgary (Canada), 2005.

This thesis attempts to study the process of surface roughening during the deposition of a semiconductor material on another, a process commonly known as epitaxy, rising kinetic Monte Carlo modeling. The surface profile and its morphology change during epitaxial deposition, and information about the atomistic processes involved is important for fabrication of semiconductor nano-devices with desired characteristic features. A multi-particle kinetic Monte Carlo model is used to simulate deposition of Si on Si(001) (homoepitaxy) in (1+1)-dimensions and Ge on Si(001) (heteroepitaxy) in (2+1)-dimensions. The simulation model is based on a discrete description of atoms so that the unit, length scale coincides with the atomic diameter. The first set of results corresponds to (1+1)-dimensional simulations of Si layers deposited on initially flat Si(001) and initially structured Si(001) substrate. The driving force for the motion of diffusing atoms (or adatoms) is the tendency of an adatom to maximize the number of bonds it makes with its neighbors. Various roughness parameters were evaluated and analyzed to give insight into the process. Results obtained from one-dimensional simulations show the evolution of surface roughening as Si is deposited on Si(001) substrate. (Abstract shortened by UMI.)

ISBN: 0494061359Subjects--Topical Terms:

1017759
Engineering, Materials Science.

Surface morphology of growing epitaxial layers: Simulations using kinetic Monte Carlo method.
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500 $a Source: Masters Abstracts International, Volume: 44-02, page: 1018.
502 $a Thesis (M.Sc.)--University of Calgary (Canada), 2005.
520 $a This thesis attempts to study the process of surface roughening during the deposition of a semiconductor material on another, a process commonly known as epitaxy, rising kinetic Monte Carlo modeling. The surface profile and its morphology change during epitaxial deposition, and information about the atomistic processes involved is important for fabrication of semiconductor nano-devices with desired characteristic features. A multi-particle kinetic Monte Carlo model is used to simulate deposition of Si on Si(001) (homoepitaxy) in (1+1)-dimensions and Ge on Si(001) (heteroepitaxy) in (2+1)-dimensions. The simulation model is based on a discrete description of atoms so that the unit, length scale coincides with the atomic diameter. The first set of results corresponds to (1+1)-dimensional simulations of Si layers deposited on initially flat Si(001) and initially structured Si(001) substrate. The driving force for the motion of diffusing atoms (or adatoms) is the tendency of an adatom to maximize the number of bonds it makes with its neighbors. Various roughness parameters were evaluated and analyzed to give insight into the process. Results obtained from one-dimensional simulations show the evolution of surface roughening as Si is deposited on Si(001) substrate. (Abstract shortened by UMI.)
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