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Monte Carlo simulation of hole trans...

Dolguikh, Maxim V.

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Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures.

Record Type:	Electronic resources : Monograph/item
Title/Author:	Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures./
Author:	Dolguikh, Maxim V.
Description:	137 p.
Notes:	Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5458.
Contained By:	Dissertation Abstracts International66-10B.
Subject:	Physics, Condensed Matter. -
Online resource:	http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3193471
ISBN:	0542361795

Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures.
Dolguikh, Maxim V.

Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures. - 137 p.

Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5458.

Thesis (Ph.D.)--University of Central Florida, 2005.

Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole accumulation in E &perp; B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. The same device structure is considered in GaAs. The case of Si is much more complicated due to strong anisotropy of the valence band. The primary new result for Si is the first consideration of the anisotropy of optical phonon scattering for hot holes.

ISBN: 0542361795Subjects--Topical Terms:

1018743
Physics, Condensed Matter.

Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures.
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020 $a 0542361795
035 $a (UnM)AAI3193471
035 $a AAI3193471
040 $a UnM $c UnM
100 1 $a Dolguikh, Maxim V. $3 1903204
245 1 0 $a Monte Carlo simulation of hole transport and terahertz amplification in multilayer delta doped semicondutor structures.
300 $a 137 p.
500 $a Source: Dissertation Abstracts International, Volume: 66-10, Section: B, page: 5458.
500 $a Adviser: Robert E. Peale.
502 $a Thesis (Ph.D.)--University of Central Florida, 2005.
520 $a Monte Carlo method for the simulation of hole dynamics in degenerate valence subbands of cubic semiconductors is developed. All possible intra- and inter-subband scattering rates are theoretically calculated for Ge, Si, and GaAs. A far-infrared laser concept based on intersubband transitions of holes in p-type periodically delta-doped semiconductor films is studied using numerical Monte-Carlo simulation of hot hole dynamics. The considered device consists of monocrystalline pure Ge layers periodically interleaved with delta-doped layers and operates with vertical or in-plane hole transport in the presence of a perpendicular in-plane magnetic field. Inversion population on intersubband transitions arises due to light hole accumulation in E &perp; B fields, as in the bulk p-Ge laser. However, the considered structure achieves spatial separation of hole accumulation regions from the doped layers, which reduces ionized-impurity and carrier-carrier scattering for the majority of light holes. This allows remarkable increase of the gain in comparison with bulk p-Ge lasers. Population inversion and gain sufficient for laser operation are expected up to 77 K. Test structures grown by chemical vapor deposition demonstrate feasibility of producing the device with sufficient active thickness to allow quasioptical electrodynamic cavity solutions. The same device structure is considered in GaAs. The case of Si is much more complicated due to strong anisotropy of the valence band. The primary new result for Si is the first consideration of the anisotropy of optical phonon scattering for hot holes.
590 $a School code: 0705.
650 4 $a Physics, Condensed Matter. $3 1018743
650 4 $a Physics, Optics. $3 1018756
650 4 $a Physics, Radiation. $3 1019212
690 $a 0611
690 $a 0752
690 $a 0756
710 2 0 $a University of Central Florida. $3 1018467
773 0 $t Dissertation Abstracts International $g 66-10B.
790 1 0 $a Peale, Robert E., $e advisor
790 $a 0705
791 $a Ph.D.
792 $a 2005
856 4 0 $u http://pqdd.sinica.edu.tw/twdaoapp/servlet/advanced?query=3193471